BE716634A - - Google Patents

Info

Publication number
BE716634A
BE716634A BE716634DA BE716634A BE 716634 A BE716634 A BE 716634A BE 716634D A BE716634D A BE 716634DA BE 716634 A BE716634 A BE 716634A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE716634A publication Critical patent/BE716634A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
BE716634D 1967-06-15 1968-06-14 BE716634A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64631767A 1967-06-15 1967-06-15

Publications (1)

Publication Number Publication Date
BE716634A true BE716634A (en:Method) 1968-11-04

Family

ID=24592587

Family Applications (1)

Application Number Title Priority Date Filing Date
BE716634D BE716634A (en:Method) 1967-06-15 1968-06-14

Country Status (4)

Country Link
US (1) US3483446A (en:Method)
BE (1) BE716634A (en:Method)
FR (1) FR1569272A (en:Method)
GB (1) GB1161978A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659162A (en) * 1968-12-27 1972-04-25 Nippon Electric Co Semiconductor integrated circuit device having improved wiring layer structure
US3758831A (en) * 1971-06-07 1973-09-11 Motorola Inc Transistor with improved breakdown mode
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US5141881A (en) * 1989-04-20 1992-08-25 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit
JPH03238871A (ja) * 1990-02-15 1991-10-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
JP2013149925A (ja) * 2012-01-23 2013-08-01 Toshiba Corp 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2877359A (en) * 1956-04-20 1959-03-10 Bell Telephone Labor Inc Semiconductor signal storage device
GB1047388A (en:Method) * 1962-10-05
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device
US3328651A (en) * 1963-10-29 1967-06-27 Sylvania Electric Prod Semiconductor switching device and method of manufacture
US3335341A (en) * 1964-03-06 1967-08-08 Westinghouse Electric Corp Diode structure in semiconductor integrated circuit and method of making the same
GB1050805A (en:Method) * 1964-06-23 1900-01-01
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor

Also Published As

Publication number Publication date
FR1569272A (en:Method) 1969-05-30
GB1161978A (en) 1969-08-20
US3483446A (en) 1969-12-09

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