BE716634A - - Google Patents
Info
- Publication number
- BE716634A BE716634A BE716634DA BE716634A BE 716634 A BE716634 A BE 716634A BE 716634D A BE716634D A BE 716634DA BE 716634 A BE716634 A BE 716634A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64631767A | 1967-06-15 | 1967-06-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE716634A true BE716634A (en:Method) | 1968-11-04 |
Family
ID=24592587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE716634D BE716634A (en:Method) | 1967-06-15 | 1968-06-14 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3483446A (en:Method) |
BE (1) | BE716634A (en:Method) |
FR (1) | FR1569272A (en:Method) |
GB (1) | GB1161978A (en:Method) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3659162A (en) * | 1968-12-27 | 1972-04-25 | Nippon Electric Co | Semiconductor integrated circuit device having improved wiring layer structure |
US3758831A (en) * | 1971-06-07 | 1973-09-11 | Motorola Inc | Transistor with improved breakdown mode |
US3760239A (en) * | 1971-06-09 | 1973-09-18 | Cress S | Coaxial inverted geometry transistor having buried emitter |
US3891480A (en) * | 1973-10-01 | 1975-06-24 | Honeywell Inc | Bipolar semiconductor device construction |
US5141881A (en) * | 1989-04-20 | 1992-08-25 | Sanyo Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit |
JPH03238871A (ja) * | 1990-02-15 | 1991-10-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2825169B2 (ja) * | 1990-09-17 | 1998-11-18 | キヤノン株式会社 | 半導体装置 |
JP2013149925A (ja) * | 2012-01-23 | 2013-08-01 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2877359A (en) * | 1956-04-20 | 1959-03-10 | Bell Telephone Labor Inc | Semiconductor signal storage device |
GB1047388A (en:Method) * | 1962-10-05 | |||
US3293087A (en) * | 1963-03-05 | 1966-12-20 | Fairchild Camera Instr Co | Method of making isolated epitaxial field-effect device |
US3328651A (en) * | 1963-10-29 | 1967-06-27 | Sylvania Electric Prod | Semiconductor switching device and method of manufacture |
US3335341A (en) * | 1964-03-06 | 1967-08-08 | Westinghouse Electric Corp | Diode structure in semiconductor integrated circuit and method of making the same |
GB1050805A (en:Method) * | 1964-06-23 | 1900-01-01 | ||
US3380153A (en) * | 1965-09-30 | 1968-04-30 | Westinghouse Electric Corp | Method of forming a semiconductor integrated circuit that includes a fast switching transistor |
-
1967
- 1967-06-15 US US646317A patent/US3483446A/en not_active Expired - Lifetime
-
1968
- 1968-05-30 GB GB26006/68A patent/GB1161978A/en not_active Expired
- 1968-06-14 BE BE716634D patent/BE716634A/xx unknown
- 1968-06-14 FR FR1569272D patent/FR1569272A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1569272A (en:Method) | 1969-05-30 |
GB1161978A (en) | 1969-08-20 |
US3483446A (en) | 1969-12-09 |