FR1559607A - - Google Patents

Info

Publication number
FR1559607A
FR1559607A FR112630A FR1559607DA FR1559607A FR 1559607 A FR1559607 A FR 1559607A FR 112630 A FR112630 A FR 112630A FR 1559607D A FR1559607D A FR 1559607DA FR 1559607 A FR1559607 A FR 1559607A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR112630A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1559607A publication Critical patent/FR1559607A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes
FR112630A 1967-06-30 1967-06-30 Expired FR1559607A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR112630 1967-06-30

Publications (1)

Publication Number Publication Date
FR1559607A true FR1559607A (en:Method) 1969-03-14

Family

ID=8634217

Family Applications (1)

Application Number Title Priority Date Filing Date
FR112630A Expired FR1559607A (en:Method) 1967-06-30 1967-06-30

Country Status (5)

Country Link
US (1) US3607465A (en:Method)
FR (1) FR1559607A (en:Method)
GB (1) GB1234985A (en:Method)
NL (1) NL161300C (en:Method)
SE (1) SE352198B (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076004A1 (en:Method) * 1970-01-09 1971-10-15 Ibm
DE2131993A1 (de) * 1971-06-28 1973-01-18 Licentia Gmbh Verfahren zum herstellen eines niederohmigen anschlusses
EP0090686A1 (fr) * 1982-03-12 1983-10-05 Thomson-Csf Transistor PNP fort courant faisant partie d'un circuit intégré monolithique

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE361555B (en:Method) * 1969-06-10 1973-11-05 Rca Corp
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3868722A (en) * 1970-06-20 1975-02-25 Philips Corp Semiconductor device having at least two transistors and method of manufacturing same
US3961340A (en) * 1971-11-22 1976-06-01 U.S. Philips Corporation Integrated circuit having bipolar transistors and method of manufacturing said circuit
DE2351985A1 (de) * 1973-10-17 1975-04-30 Itt Ind Gmbh Deutsche Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung
US3999205A (en) * 1975-04-03 1976-12-21 Rca Corporation Rectifier structure for a semiconductor integrated circuit device
US4485552A (en) * 1980-01-18 1984-12-04 International Business Machines Corporation Complementary transistor structure and method for manufacture
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
KR0171128B1 (ko) * 1995-04-21 1999-02-01 김우중 수직형 바이폴라 트랜지스터

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076004A1 (en:Method) * 1970-01-09 1971-10-15 Ibm
DE2131993A1 (de) * 1971-06-28 1973-01-18 Licentia Gmbh Verfahren zum herstellen eines niederohmigen anschlusses
EP0090686A1 (fr) * 1982-03-12 1983-10-05 Thomson-Csf Transistor PNP fort courant faisant partie d'un circuit intégré monolithique
US4564855A (en) * 1982-03-12 1986-01-14 Thomson Csf High current PNP transistor forming part of an integrated monolithic circuit

Also Published As

Publication number Publication date
NL161300B (nl) 1979-08-15
DE1764552B2 (de) 1973-11-08
NL161300C (nl) 1980-01-15
NL6808886A (en:Method) 1968-12-31
DE1764552A1 (de) 1971-05-13
US3607465A (en) 1971-09-21
GB1234985A (en) 1971-06-09
SE352198B (en:Method) 1972-12-18

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Legal Events

Date Code Title Description
ST Notification of lapse