FR1551937A - - Google Patents

Info

Publication number
FR1551937A
FR1551937A FR1551937DA FR1551937A FR 1551937 A FR1551937 A FR 1551937A FR 1551937D A FR1551937D A FR 1551937DA FR 1551937 A FR1551937 A FR 1551937A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1551937A publication Critical patent/FR1551937A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR1551937D 1966-09-12 1967-09-08 Expired FR1551937A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0105814 1966-09-12

Publications (1)

Publication Number Publication Date
FR1551937A true FR1551937A (fr) 1969-01-03

Family

ID=7526888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1551937D Expired FR1551937A (fr) 1966-09-12 1967-09-08

Country Status (8)

Country Link
US (1) US3525909A (fr)
AT (1) AT273233B (fr)
CH (1) CH466435A (fr)
DE (1) DE1564705A1 (fr)
FR (1) FR1551937A (fr)
GB (1) GB1140643A (fr)
NL (1) NL6710964A (fr)
SE (1) SE355262B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL169122C (nl) * 1970-02-26 1982-06-01 Toyo Electronics Ind Corp Halfgeleiderelement, omvattende een halfgeleiderplaatje met een door een isolerende laag bedekt hoofdvlak en met elektroden die zich ononderbroken uitstrekken over delen van de isolerende laag en aangrenzende delen van zijvlakken van het halfgeleiderplaatje, alsmede werkwijze voor het bevestigen van het halfgeleiderelement op een van aansluitklemmen voorziene montageplaat.
US3865624A (en) * 1970-06-29 1975-02-11 Bell Telephone Labor Inc Interconnection of electrical devices
JP2513010B2 (ja) * 1988-12-27 1996-07-03 日本電気株式会社 半導体集積回路の入力保護装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3204321A (en) * 1962-09-24 1965-09-07 Philco Corp Method of fabricating passivated mesa transistor without contamination of junctions
DE1231033B (de) * 1963-09-13 1966-12-22 Siemens Ag Druckempfindliches Halbleiterbauelement mit drei Zonen abwechselnd entgegengesetztenLeitungstyps und einem Stempel auf einer Zone
US3316466A (en) * 1963-10-07 1967-04-25 Svu Silnoproude Elektrotechnik Integrated two transistor semiconductor device
NL134388C (fr) * 1964-05-15 1900-01-01
US3336508A (en) * 1965-08-12 1967-08-15 Trw Semiconductors Inc Multicell transistor
US3426253A (en) * 1966-05-26 1969-02-04 Us Army Solid state device with reduced leakage current at n-p junctions over which electrodes pass

Also Published As

Publication number Publication date
NL6710964A (fr) 1968-03-13
SE355262B (fr) 1973-04-09
CH466435A (de) 1968-12-15
US3525909A (en) 1970-08-25
DE1564705A1 (de) 1970-05-14
AT273233B (de) 1969-08-11
GB1140643A (en) 1969-01-22

Similar Documents

Publication Publication Date Title
AT281852B (fr)
AU5917865A (fr)
AU424443B2 (fr)
AU428063B2 (fr)
AU433222B2 (fr)
AU414526B2 (fr)
AU415165B1 (fr)
AU417216B2 (fr)
AU421822B2 (fr)
AU1111066A (fr)
AU218666A (fr)
AU6703465A (fr)
AU612166A (fr)
AU1144366A (fr)
AU5895065A (fr)
AU411645B2 (fr)
BE673316A (fr)
BE674777A (fr)
BE693528A (fr)
AU407778B2 (fr)
BE674792A (fr)
AU2390066A (fr)
BE662818A (fr)
BE674882A (fr)
BE666282A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse