FR1526482A - Procédé pour la réalisation d'un film mince en monocristal de grenat synthétique ainsi que films conformes à ceux ainsi obtenus - Google Patents

Procédé pour la réalisation d'un film mince en monocristal de grenat synthétique ainsi que films conformes à ceux ainsi obtenus

Info

Publication number
FR1526482A
FR1526482A FR8913A FR67008913A FR1526482A FR 1526482 A FR1526482 A FR 1526482A FR 8913 A FR8913 A FR 8913A FR 67008913 A FR67008913 A FR 67008913A FR 1526482 A FR1526482 A FR 1526482A
Authority
FR
France
Prior art keywords
producing
well
thin film
those
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8913A
Other languages
English (en)
Inventor
Robert C Linares
Robert B Mc Graw Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Application granted granted Critical
Publication of FR1526482A publication Critical patent/FR1526482A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Magnetic Films (AREA)
FR8913A 1967-03-24 1967-06-07 Procédé pour la réalisation d'un film mince en monocristal de grenat synthétique ainsi que films conformes à ceux ainsi obtenus Expired FR1526482A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62574667A 1967-03-24 1967-03-24

Publications (1)

Publication Number Publication Date
FR1526482A true FR1526482A (fr) 1968-05-24

Family

ID=24507410

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8913A Expired FR1526482A (fr) 1967-03-24 1967-06-07 Procédé pour la réalisation d'un film mince en monocristal de grenat synthétique ainsi que films conformes à ceux ainsi obtenus

Country Status (2)

Country Link
US (1) US3486937A (fr)
FR (1) FR1526482A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2132849A1 (fr) * 1971-04-12 1972-11-24 Western Electric Co
FR2138410A1 (fr) * 1971-05-25 1973-01-05 Commissariat Energie Atomique
DE2304026A1 (de) * 1972-02-02 1973-08-09 Western Electric Co Optische wellenleitervorrichtung in duennschichtausfuehrung
EP0606867A1 (fr) * 1993-01-11 1994-07-20 Murata Manufacturing Co., Ltd. Matériau pour dispositifs à ondes magnétostatiques

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982049A (en) * 1969-06-16 1976-09-21 Rockwell International Corporation Method for producing single crystal films
US3607390A (en) * 1969-09-29 1971-09-21 Ibm Single crystal ferrimagnetic films
US3837911A (en) * 1971-04-12 1974-09-24 Bell Telephone Labor Inc Magnetic devices utilizing garnet epitaxial materials and method of production
US4001076A (en) * 1974-12-11 1977-01-04 Gte Laboratories Incorporated Method for growing thin epitaxial layers of a non-linear, optically active material
US4093781A (en) * 1975-05-27 1978-06-06 Rockwell International Corporation Epitaxial, sodium-substituted lithium ferrite films
US4189521A (en) * 1977-07-05 1980-02-19 Rockwell International Corporation Epitaxial growth of M-type hexagonal ferrite films on spinel substrates and composite
NL7713759A (nl) * 1977-12-13 1979-06-15 Philips Nv Magnetisch beldomein materiaal en inrichting voor het voortbewegen van magnetische beldomei- nen waarvan een dergelijk materiaal deel uit- maakt.
US4263374A (en) * 1978-06-22 1981-04-21 Rockwell International Corporation Temperature-stabilized low-loss ferrite films
US4190683A (en) * 1978-08-28 1980-02-26 International Business Machines Corporation Method for forming a liquid phase epitaxial film on a wafer
US4277519A (en) * 1978-09-01 1981-07-07 Bell Telephone Laboratories, Incorporated Simultaneous formation of garnet epilayer on a plurality of substrates
US4273609A (en) * 1978-10-25 1981-06-16 Sperry Corporation Rinse melt for LPE crystals
US4337521A (en) * 1979-12-26 1982-06-29 Bell Telephone Laboratories, Incorporated Advantageous garnet based devices
US4293372A (en) * 1980-07-15 1981-10-06 Rockwell International Corporation Growth of single-crystal magnetoplumbite
JPS60138731A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 磁気記録媒体の製造方法
CN103526282A (zh) * 2013-10-22 2014-01-22 北京大学东莞光电研究院 一种生长氮化物单晶体材料的装置及方法
CN104894644B (zh) * 2015-06-29 2017-04-26 北京大学东莞光电研究院 一种氮化物晶体的生长装置及方法
DE112016004563T5 (de) 2015-10-06 2018-07-12 Northrop Grumman Systems Corporation Autonomes fahrzeugsteuerungssystem
CN106367804B (zh) * 2016-10-28 2019-01-15 北京大学东莞光电研究院 一种压强调控晶体生长反应釜

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals
US3100158A (en) * 1960-11-02 1963-08-06 Rca Corp Methods for obtaining films of magnetic spinel crystals on substrates
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
US3131082A (en) * 1962-02-01 1964-04-28 Gen Electric Rare earth-iron garnet preparation
US3197334A (en) * 1962-11-06 1965-07-27 Jr William L Wade Method of coating a substrate with magnetic ferrite film
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3404026A (en) * 1965-04-06 1968-10-01 Army Usa Method of forming magnetic ferrite films
US3429740A (en) * 1965-09-24 1969-02-25 North American Rockwell Growing garnet on non-garnet single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2132849A1 (fr) * 1971-04-12 1972-11-24 Western Electric Co
FR2138410A1 (fr) * 1971-05-25 1973-01-05 Commissariat Energie Atomique
DE2304026A1 (de) * 1972-02-02 1973-08-09 Western Electric Co Optische wellenleitervorrichtung in duennschichtausfuehrung
EP0606867A1 (fr) * 1993-01-11 1994-07-20 Murata Manufacturing Co., Ltd. Matériau pour dispositifs à ondes magnétostatiques

Also Published As

Publication number Publication date
US3486937A (en) 1969-12-30

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