FR1503192A - Perfectionnements apportés aux éléments semi-conducteurs bi-stables - Google Patents

Perfectionnements apportés aux éléments semi-conducteurs bi-stables

Info

Publication number
FR1503192A
FR1503192A FR86020A FR86020A FR1503192A FR 1503192 A FR1503192 A FR 1503192A FR 86020 A FR86020 A FR 86020A FR 86020 A FR86020 A FR 86020A FR 1503192 A FR1503192 A FR 1503192A
Authority
FR
France
Prior art keywords
semiconductor elements
improvements made
stable semiconductor
stable
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR86020A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Application granted granted Critical
Publication of FR1503192A publication Critical patent/FR1503192A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
FR86020A 1965-12-07 1966-12-02 Perfectionnements apportés aux éléments semi-conducteurs bi-stables Expired FR1503192A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19651286657 DE1286657C2 (de) 1965-12-07 1965-12-07 Verfahren zur herstellung eines bistabilen halbleiter-schaltelements und danach hergestelltes halbleiter-schaltelement
DED0048842 1965-12-07

Publications (1)

Publication Number Publication Date
FR1503192A true FR1503192A (fr) 1967-11-24

Family

ID=25751623

Family Applications (1)

Application Number Title Priority Date Filing Date
FR86020A Expired FR1503192A (fr) 1965-12-07 1966-12-02 Perfectionnements apportés aux éléments semi-conducteurs bi-stables

Country Status (4)

Country Link
BE (1) BE690143A (fr)
DE (1) DE1286657C2 (fr)
FR (1) FR1503192A (fr)
NL (1) NL6617140A (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE895199C (de) * 1945-04-19 1953-11-02 Telefunken Gmbh Kontaktdetektor
DE1252819B (de) * 1961-11-06 1967-10-26 Western Electric Company Incorporated, New York, N. Y. (V. St. A.) Elektronisches Festkörperbauelement

Also Published As

Publication number Publication date
DE1286657B (de) 1974-11-14
BE690143A (fr) 1967-05-02
NL6617140A (fr) 1967-06-08
DE1286657C2 (de) 1974-11-14

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