FR1485024A - Circuit structure with isolated semiconductor devices and method for forming this structure - Google Patents

Circuit structure with isolated semiconductor devices and method for forming this structure

Info

Publication number
FR1485024A
FR1485024A FR67280A FR67280A FR1485024A FR 1485024 A FR1485024 A FR 1485024A FR 67280 A FR67280 A FR 67280A FR 67280 A FR67280 A FR 67280A FR 1485024 A FR1485024 A FR 1485024A
Authority
FR
France
Prior art keywords
forming
semiconductor devices
isolated semiconductor
circuit structure
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR67280A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US467422A external-priority patent/US3407479A/en
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to FR67280A priority Critical patent/FR1485024A/en
Application granted granted Critical
Publication of FR1485024A publication Critical patent/FR1485024A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
FR67280A 1965-06-28 1966-06-28 Circuit structure with isolated semiconductor devices and method for forming this structure Expired FR1485024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR67280A FR1485024A (en) 1965-06-28 1966-06-28 Circuit structure with isolated semiconductor devices and method for forming this structure

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US46753165A 1965-06-28 1965-06-28
US467422A US3407479A (en) 1965-06-28 1965-06-28 Isolation of semiconductor devices
FR67280A FR1485024A (en) 1965-06-28 1966-06-28 Circuit structure with isolated semiconductor devices and method for forming this structure

Publications (1)

Publication Number Publication Date
FR1485024A true FR1485024A (en) 1967-06-16

Family

ID=27243353

Family Applications (1)

Application Number Title Priority Date Filing Date
FR67280A Expired FR1485024A (en) 1965-06-28 1966-06-28 Circuit structure with isolated semiconductor devices and method for forming this structure

Country Status (1)

Country Link
FR (1) FR1485024A (en)

Similar Documents

Publication Publication Date Title
AT263084B (en) Semiconductor device
CH470085A (en) Semiconductor device
GB1124202A (en) Method of manufacturing semiconductor devices
AT264589B (en) Semiconductor device
MY7300228A (en) Transistor circuits
FR1432721A (en) Device for the production of radio-elements
AT269217B (en) Semiconductor device
GB1123398A (en) Semiconductor device
FR1506109A (en) Process for manufacturing integrated circuits
CH439392A (en) Gate circuit
FR1458890A (en) Module for electrical circuits and its manufacturing process
GB1119297A (en) Semiconductor device
AT273227B (en) Semiconductor device
FR1485024A (en) Circuit structure with isolated semiconductor devices and method for forming this structure
AT265432B (en) Semiconductor component
AT254987B (en) Semiconductor device
CH444318A (en) Semiconductor component
CH443492A (en) Semiconductor device
CH446539A (en) Semiconductor component
AT266218B (en) Semiconductor component
FR1448487A (en) electrode for accumulator and device for the manufacture of the mesh of this electrode
FR1494434A (en) Semiconductor devices
FR1534296A (en) Semiconductor device and method for forming and stabilizing it
AT266921B (en) Semiconductor device
IE29375L (en) Manufacture of semiconductor devices