CH446539A - Semiconductor component - Google Patents

Semiconductor component

Info

Publication number
CH446539A
CH446539A CH1836266A CH1836266A CH446539A CH 446539 A CH446539 A CH 446539A CH 1836266 A CH1836266 A CH 1836266A CH 1836266 A CH1836266 A CH 1836266A CH 446539 A CH446539 A CH 446539A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
CH1836266A
Other languages
German (de)
Inventor
Hinze Friedrich-Karl
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of CH446539A publication Critical patent/CH446539A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
CH1836266A 1965-12-28 1966-12-22 Semiconductor component CH446539A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0052489 1965-12-28

Publications (1)

Publication Number Publication Date
CH446539A true CH446539A (en) 1967-11-15

Family

ID=7274749

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1836266A CH446539A (en) 1965-12-28 1966-12-22 Semiconductor component

Country Status (3)

Country Link
CH (1) CH446539A (en)
DE (1) DE1514184A1 (en)
FR (1) FR1506862A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406307A1 (en) * 1977-10-17 1979-05-11 Radiotechnique Compelec Passivated semiconductor devices - esp. mesa diodes, where edges of pn junctions are covered by film of silica
FR2468207A1 (en) * 1979-10-23 1981-04-30 Thomson Csf Separation slot structure in semiconductors - has shallow V=shape esp. for mesa structures obtained by chemical attack or mechanical grinding
JPS6279667A (en) * 1985-10-03 1987-04-13 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
FR1506862A (en) 1967-12-22
DE1514184A1 (en) 1969-09-11

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