FR1473005A - Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur - Google Patents

Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur

Info

Publication number
FR1473005A
FR1473005A FR36453A FR36453A FR1473005A FR 1473005 A FR1473005 A FR 1473005A FR 36453 A FR36453 A FR 36453A FR 36453 A FR36453 A FR 36453A FR 1473005 A FR1473005 A FR 1473005A
Authority
FR
France
Prior art keywords
semiconductor devices
producing semiconductor
ohmic emitter
emitter shunts
shunts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR36453A
Other languages
English (en)
Inventor
Jacques Toulemonde
Pierre Giraud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR36129A priority Critical patent/FR1485529A/fr
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR36453A priority patent/FR1473005A/fr
Priority to BE688353D priority patent/BE688353A/xx
Priority to CH1514566A priority patent/CH449783A/fr
Priority to LU52199D priority patent/LU52199A1/xx
Priority to NL6615089A priority patent/NL6615089A/xx
Application granted granted Critical
Publication of FR1473005A publication Critical patent/FR1473005A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR36453A 1965-10-25 1965-10-28 Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur Expired FR1473005A (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR36129A FR1485529A (fr) 1965-10-25 1965-10-25 Procédé de réalisation de shunts ohmiques d'émetteur sur un ensemble semiconducteur
FR36453A FR1473005A (fr) 1965-10-25 1965-10-28 Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur
BE688353D BE688353A (fr) 1965-10-25 1966-10-17
CH1514566A CH449783A (fr) 1965-10-25 1966-10-18 Procédé de réalisation de shunts ohmiques d'émetteur sur un composant semi-conducteur
LU52199D LU52199A1 (fr) 1965-10-25 1966-10-19
NL6615089A NL6615089A (fr) 1965-10-25 1966-10-25

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR36129A FR1485529A (fr) 1965-10-25 1965-10-25 Procédé de réalisation de shunts ohmiques d'émetteur sur un ensemble semiconducteur
FR36453A FR1473005A (fr) 1965-10-25 1965-10-28 Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur

Publications (1)

Publication Number Publication Date
FR1473005A true FR1473005A (fr) 1967-03-17

Family

ID=26166994

Family Applications (2)

Application Number Title Priority Date Filing Date
FR36129A Expired FR1485529A (fr) 1965-10-25 1965-10-25 Procédé de réalisation de shunts ohmiques d'émetteur sur un ensemble semiconducteur
FR36453A Expired FR1473005A (fr) 1965-10-25 1965-10-28 Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR36129A Expired FR1485529A (fr) 1965-10-25 1965-10-25 Procédé de réalisation de shunts ohmiques d'émetteur sur un ensemble semiconducteur

Country Status (5)

Country Link
BE (1) BE688353A (fr)
CH (1) CH449783A (fr)
FR (2) FR1485529A (fr)
LU (1) LU52199A1 (fr)
NL (1) NL6615089A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction

Also Published As

Publication number Publication date
LU52199A1 (fr) 1968-05-08
BE688353A (fr) 1967-04-17
NL6615089A (fr) 1967-04-26
FR1485529A (fr) 1967-06-23
CH449783A (fr) 1968-01-15

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