FR1465239A - Method for forming narrow channel semiconductor semiconductor devices obtained by the method - Google Patents

Method for forming narrow channel semiconductor semiconductor devices obtained by the method

Info

Publication number
FR1465239A
FR1465239A FR46985A FR46985A FR1465239A FR 1465239 A FR1465239 A FR 1465239A FR 46985 A FR46985 A FR 46985A FR 46985 A FR46985 A FR 46985A FR 1465239 A FR1465239 A FR 1465239A
Authority
FR
France
Prior art keywords
semiconductor
narrow channel
devices obtained
forming narrow
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR46985A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Technologies Corp
Original Assignee
United Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Priority to FR46985A priority Critical patent/FR1465239A/en
Application granted granted Critical
Publication of FR1465239A publication Critical patent/FR1465239A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR46985A 1965-02-19 1966-01-24 Method for forming narrow channel semiconductor semiconductor devices obtained by the method Expired FR1465239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR46985A FR1465239A (en) 1965-02-19 1966-01-24 Method for forming narrow channel semiconductor semiconductor devices obtained by the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43397365A 1965-02-19 1965-02-19
FR46985A FR1465239A (en) 1965-02-19 1966-01-24 Method for forming narrow channel semiconductor semiconductor devices obtained by the method

Publications (1)

Publication Number Publication Date
FR1465239A true FR1465239A (en) 1967-01-06

Family

ID=26168130

Family Applications (1)

Application Number Title Priority Date Filing Date
FR46985A Expired FR1465239A (en) 1965-02-19 1966-01-24 Method for forming narrow channel semiconductor semiconductor devices obtained by the method

Country Status (1)

Country Link
FR (1) FR1465239A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064129A1 (en) * 1969-10-03 1971-07-16 Gen Electric
EP0057336A2 (en) * 1981-01-29 1982-08-11 American Microsystems, Incorporated Bipolar transistor with base plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064129A1 (en) * 1969-10-03 1971-07-16 Gen Electric
EP0057336A2 (en) * 1981-01-29 1982-08-11 American Microsystems, Incorporated Bipolar transistor with base plate
EP0057336A3 (en) * 1981-01-29 1982-08-18 American Microsystems, Incorporated Bipolar transistor with base plate

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