FR1459589A - Procédé et appareil pour produire un ruban de matière semi-conductrice cristalline - Google Patents

Procédé et appareil pour produire un ruban de matière semi-conductrice cristalline

Info

Publication number
FR1459589A
FR1459589A FR42207A FR42207A FR1459589A FR 1459589 A FR1459589 A FR 1459589A FR 42207 A FR42207 A FR 42207A FR 42207 A FR42207 A FR 42207A FR 1459589 A FR1459589 A FR 1459589A
Authority
FR
France
Prior art keywords
ribbon
producing
semiconductor material
crystalline semiconductor
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR42207A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of FR1459589A publication Critical patent/FR1459589A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
FR42207A 1964-12-14 1965-12-14 Procédé et appareil pour produire un ruban de matière semi-conductrice cristalline Expired FR1459589A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41804364A 1964-12-14 1964-12-14
US450746A US3453352A (en) 1964-12-14 1965-04-26 Method and apparatus for producing crystalline semiconductor ribbon

Publications (1)

Publication Number Publication Date
FR1459589A true FR1459589A (fr) 1966-11-18

Family

ID=27023956

Family Applications (1)

Application Number Title Priority Date Filing Date
FR42207A Expired FR1459589A (fr) 1964-12-14 1965-12-14 Procédé et appareil pour produire un ruban de matière semi-conductrice cristalline

Country Status (5)

Country Link
US (1) US3453352A (fr)
DE (1) DE1544320B1 (fr)
FR (1) FR1459589A (fr)
GB (1) GB1102989A (fr)
NL (1) NL6516168A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617223A (en) * 1968-05-21 1971-11-02 Texas Instruments Inc Apparatus for forming monocrystalline ribbons of silicon
US3795488A (en) * 1971-02-01 1974-03-05 Gen Electric Method for producing crystal boules with extensive flat, parallel facets
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals
US3954551A (en) * 1974-07-17 1976-05-04 Texas Instruments Incorporated Method of pulling silicon ribbon through shaping guide
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
DE2508369A1 (de) * 1975-02-26 1976-09-02 Siemens Ag Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen
US3984256A (en) * 1975-04-25 1976-10-05 Nasa Photovoltaic cell array
US4090851A (en) * 1976-10-15 1978-05-23 Rca Corporation Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4099924A (en) * 1977-03-16 1978-07-11 Rca Corporation Apparatus improvements for growing single crystalline silicon sheets
US4373571A (en) * 1980-12-04 1983-02-15 Olin Corporation Apparatus and process for electromagnetically shaping a molten material within a narrow containment zone
US4358416A (en) * 1980-12-04 1982-11-09 Olin Corporation Apparatus and process for cooling and solidifying molten material being electromagnetically cast
DE3938937A1 (de) * 1989-11-24 1991-05-29 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben mit hohem sauerstoffgehalt durch tiegelfreies zonenziehen, dadurch erhaeltliche siliciumstaebe und daraus hergestellte siliciumscheiben
DE69301371T2 (de) * 1992-03-31 1996-09-05 Shinetsu Handotai Kk Vorrichtung zum Ziehen eines Silizium-Einkristalls
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
NL255530A (fr) * 1959-09-11
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
FR1288407A (fr) * 1960-05-02 1962-03-24 Rca Corp Procédé de préparation de monocristaux
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size

Also Published As

Publication number Publication date
NL6516168A (fr) 1966-06-15
US3453352A (en) 1969-07-01
GB1102989A (en) 1968-02-14
DE1544320B1 (de) 1970-04-30

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