FR1524729A - Procédé et appareil pour la production continue de matières semi-conductrices - Google Patents

Procédé et appareil pour la production continue de matières semi-conductrices

Info

Publication number
FR1524729A
FR1524729A FR108146A FR108146A FR1524729A FR 1524729 A FR1524729 A FR 1524729A FR 108146 A FR108146 A FR 108146A FR 108146 A FR108146 A FR 108146A FR 1524729 A FR1524729 A FR 1524729A
Authority
FR
France
Prior art keywords
continuous production
semiconductor materials
semiconductor
materials
continuous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR108146A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to FR108146A priority Critical patent/FR1524729A/fr
Application granted granted Critical
Publication of FR1524729A publication Critical patent/FR1524729A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B59/00—Obtaining rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
FR108146A 1966-05-27 1967-05-26 Procédé et appareil pour la production continue de matières semi-conductrices Expired FR1524729A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR108146A FR1524729A (fr) 1966-05-27 1967-05-26 Procédé et appareil pour la production continue de matières semi-conductrices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55335766A 1966-05-27 1966-05-27
FR108146A FR1524729A (fr) 1966-05-27 1967-05-26 Procédé et appareil pour la production continue de matières semi-conductrices

Publications (1)

Publication Number Publication Date
FR1524729A true FR1524729A (fr) 1968-05-10

Family

ID=26176852

Family Applications (1)

Application Number Title Priority Date Filing Date
FR108146A Expired FR1524729A (fr) 1966-05-27 1967-05-26 Procédé et appareil pour la production continue de matières semi-conductrices

Country Status (1)

Country Link
FR (1) FR1524729A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419335A1 (fr) * 1978-03-08 1979-10-05 Gordon Roy Gerald Procede de depot d'un revetement sur du verre
EP0007063A1 (fr) * 1978-07-11 1980-01-23 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Procédé et dispositif d'élaboration de silicium polycristallin

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419335A1 (fr) * 1978-03-08 1979-10-05 Gordon Roy Gerald Procede de depot d'un revetement sur du verre
EP0007063A1 (fr) * 1978-07-11 1980-01-23 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Procédé et dispositif d'élaboration de silicium polycristallin
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin

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