FR1455187A - Perfectionnements aux multivibrateurs bistables - Google Patents

Perfectionnements aux multivibrateurs bistables

Info

Publication number
FR1455187A
FR1455187A FR22768A FR22768A FR1455187A FR 1455187 A FR1455187 A FR 1455187A FR 22768 A FR22768 A FR 22768A FR 22768 A FR22768 A FR 22768A FR 1455187 A FR1455187 A FR 1455187A
Authority
FR
France
Prior art keywords
bistable multivibrators
multivibrators
bistable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR22768A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1455187A publication Critical patent/FR1455187A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4026—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
FR22768A 1964-06-29 1965-06-29 Perfectionnements aux multivibrateurs bistables Expired FR1455187A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37872664A 1964-06-29 1964-06-29

Publications (1)

Publication Number Publication Date
FR1455187A true FR1455187A (fr) 1966-04-01

Family

ID=23494312

Family Applications (1)

Application Number Title Priority Date Filing Date
FR22768A Expired FR1455187A (fr) 1964-06-29 1965-06-29 Perfectionnements aux multivibrateurs bistables

Country Status (6)

Country Link
US (1) US3421026A (fr)
CH (1) CH446440A (fr)
DE (1) DE1265784B (fr)
FR (1) FR1455187A (fr)
GB (1) GB1063003A (fr)
SE (1) SE312578B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
DE1912176C2 (de) * 1969-03-11 1983-10-27 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Speicherzelle
GB1232946A (fr) * 1970-02-06 1971-05-26
US3720821A (en) * 1971-03-04 1973-03-13 Bell Telephone Labor Inc Threshold logic circuits
US3885169A (en) * 1971-03-04 1975-05-20 Bell Telephone Labor Inc Storage-processor element including a bistable circuit and a steering circuit
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
US5173619A (en) * 1988-05-26 1992-12-22 International Business Machines Corporation Bidirectional buffer with latch and parity capability
US5107507A (en) * 1988-05-26 1992-04-21 International Business Machines Bidirectional buffer with latch and parity capability
US4991138A (en) * 1989-04-03 1991-02-05 International Business Machines Corporation High speed memory cell with multiple port capability
US5629569A (en) * 1995-05-15 1997-05-13 Intermatic, Inc. Thermal photocontrol switch circuit
CN103632712A (zh) 2012-08-27 2014-03-12 辉达公司 存储单元和存储器
US9685207B2 (en) 2012-12-04 2017-06-20 Nvidia Corporation Sequential access memory with master-slave latch pairs and method of operating
US9281817B2 (en) 2012-12-31 2016-03-08 Nvidia Corporation Power conservation using gray-coded address sequencing
US20140244921A1 (en) * 2013-02-26 2014-08-28 Nvidia Corporation Asymmetric multithreaded fifo memory
US10141930B2 (en) 2013-06-04 2018-11-27 Nvidia Corporation Three state latch

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050376B (de) * 1959-02-12 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Einrichtungen an bistabilen HaIbleiterkippschaltungen als Gedächtniselemente in Steuer und Regelanlagen zur Vermeidung von Fch'kommandos nach Netzspannungsausfallen
US2888580A (en) * 1955-05-02 1959-05-26 North American Aviation Inc Transistor multivibrator
NL202652A (fr) * 1955-12-07
US3173028A (en) * 1962-02-13 1965-03-09 Westinghouse Electric Corp Solid state bistable multivibrator

Also Published As

Publication number Publication date
DE1265784B (de) 1968-04-11
US3421026A (en) 1969-01-07
CH446440A (de) 1967-11-15
SE312578B (fr) 1969-07-21
GB1063003A (en) 1967-03-22

Similar Documents

Publication Publication Date Title
FR1460495A (fr) Perfectionnements aux robinets
FR1455187A (fr) Perfectionnements aux multivibrateurs bistables
FR1406016A (fr) Perfectionnements apportés aux robinets
FR1426552A (fr) Perfectionnements apportés aux carburateurs
FR1462207A (fr) Perfectionnements aux scellements
FR1443036A (fr) Perfectionnements apportés aux excavateurs
FR1425444A (fr) Perfectionnements apportés aux voies ferrées
FR1434768A (fr) Dispositifs bistables
FR1425520A (fr) Perfectionnements aux casseroles
FR1400834A (fr) Amélioration aux aérodynes
FR1417323A (fr) Perfectionnements aux aérateurs
FR1449289A (fr) Perfectionnements apportés aux rayonnages
FR1426099A (fr) Perfectionnements apportés aux plansichters
FR1410133A (fr) Perfectionnements apportés aux broyeurs-agitateurs
FR1441710A (fr) Multivibrateur bistable perfectionné
FR1458856A (fr) Multivibrateur bistable
FR1412752A (fr) Perfectionnements apportés aux grues
FR1381948A (fr) Perfectionnements apportés aux houses-armoires
FR1412250A (fr) Perfectionnements apportés aux agitateurs mécaniques
FR1399483A (fr) Perfectionnements apportés aux structures laminaires
FR1413571A (fr) Perfectionnements apportés aux escaliers roulants
FR1408350A (fr) Perfectionnements aux réfrigérateurs
FR1401036A (fr) Perfectionnements apportés aux réfrigérateurs
FR1411045A (fr) Perfectionnements aux robinets
FR1392659A (fr) Perfectionnements aux haveuses