FR1452719A - Perfectionnements à la fabrication des dispositifs semiconducteurs - Google Patents

Perfectionnements à la fabrication des dispositifs semiconducteurs

Info

Publication number
FR1452719A
FR1452719A FR26197A FR26197A FR1452719A FR 1452719 A FR1452719 A FR 1452719A FR 26197 A FR26197 A FR 26197A FR 26197 A FR26197 A FR 26197A FR 1452719 A FR1452719 A FR 1452719A
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing improvements
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR26197A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority to FR26197A priority Critical patent/FR1452719A/fr
Application granted granted Critical
Publication of FR1452719A publication Critical patent/FR1452719A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR26197A 1964-07-27 1965-07-27 Perfectionnements à la fabrication des dispositifs semiconducteurs Expired FR1452719A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR26197A FR1452719A (fr) 1964-07-27 1965-07-27 Perfectionnements à la fabrication des dispositifs semiconducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38526664A 1964-07-27 1964-07-27
FR26197A FR1452719A (fr) 1964-07-27 1965-07-27 Perfectionnements à la fabrication des dispositifs semiconducteurs

Publications (1)

Publication Number Publication Date
FR1452719A true FR1452719A (fr) 1966-04-15

Family

ID=26165046

Family Applications (1)

Application Number Title Priority Date Filing Date
FR26197A Expired FR1452719A (fr) 1964-07-27 1965-07-27 Perfectionnements à la fabrication des dispositifs semiconducteurs

Country Status (1)

Country Link
FR (1) FR1452719A (fr)

Similar Documents

Publication Publication Date Title
FR1417760A (fr) Dispositifs semi-conducteurs à circuit intégré
CH432661A (de) Halbleitervorrichtung
FR1444353A (fr) Dispositifs semi-conducteurs et procédés de fabrication
FR1365283A (fr) Fabrication de dispositifs semiconducteurs
FR1427391A (fr) Perfectionnements aux dispositifs à semiconducteurs
CH424995A (de) Halbleitervorrichtung
FR1459892A (fr) Dispositifs semi-conducteurs
AT272427B (de) Thermoelektrische Halbleiteranordnung
CH422168A (de) Halbleiteranordnung
FR1364522A (fr) Perfectionnements à la fabrication des dispositifs à semi-conducteurs
FR1449089A (fr) Dispositifs semi-conducteurs
FR1425709A (fr) Procédé de fabrication de dispositifs à semi-conducteur
FR1452719A (fr) Perfectionnements à la fabrication des dispositifs semiconducteurs
FR1486141A (fr) Perfectionnements à la fabrication des dispositifs semi-conducteurs
FR1348734A (fr) Perfectionnement à la fabrication des dispositifs à semi-conducteur
FR1413748A (fr) Fabrication de dispositifs semi-conducteurs
FR1434071A (fr) Perfectionnements aux dispositifs à semiconducteur
FR1440927A (fr) éléément semi-conducteur
FR1461531A (fr) Procédé de fabrication des dispositifs à semi-conducteurs
FR1445215A (fr) Perfectionnements apportés à des dispositifs semiconducteurs
FR1545278A (fr) Perfectionnements à la fabrication des dispositifs semiconducteurs
FR1348818A (fr) Perfectionnements à la fabrication des dispositifs à semi-conducteurs
FR1505163A (fr) Fabrication de dispositifs semi-conducteurs
FR87077E (fr) Fabrication de dispositifs semi-conducteurs
FR1422168A (fr) Perfectionnements aux dispositifs à semi-conducteurs