FR1446395A - Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus

Info

Publication number
FR1446395A
FR1446395A FR20008A FR20008A FR1446395A FR 1446395 A FR1446395 A FR 1446395A FR 20008 A FR20008 A FR 20008A FR 20008 A FR20008 A FR 20008A FR 1446395 A FR1446395 A FR 1446395A
Authority
FR
France
Prior art keywords
devices
manufacturing process
semiconductor devices
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR20008A
Other languages
English (en)
Inventor
Michel Brunet
Johannes Meuleman
Jacques Thire
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique SA
Original Assignee
Radiotechnique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique SA filed Critical Radiotechnique SA
Priority to FR20008A priority Critical patent/FR1446395A/fr
Application granted granted Critical
Publication of FR1446395A publication Critical patent/FR1446395A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
FR20008A 1965-06-09 1965-06-09 Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus Expired FR1446395A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR20008A FR1446395A (fr) 1965-06-09 1965-06-09 Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR20008A FR1446395A (fr) 1965-06-09 1965-06-09 Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus

Publications (1)

Publication Number Publication Date
FR1446395A true FR1446395A (fr) 1966-07-22

Family

ID=8581266

Family Applications (1)

Application Number Title Priority Date Filing Date
FR20008A Expired FR1446395A (fr) 1965-06-09 1965-06-09 Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus

Country Status (1)

Country Link
FR (1) FR1446395A (fr)

Similar Documents

Publication Publication Date Title
FR96253E (fr) Procédé de fabrication de réservoirs et reservoirs ainsi obtenus.
FR1359004A (fr) Procédé perfectionné de fabrication de dispositifs semi-conducteurs et produits obtenus
FR1485063A (fr) Dispositifs semi-conducteurs et leur procédé de fabrication
FR1386964A (fr) Procédé de fabrication de dispositifs semi-conducteurs intégrés
FR1313638A (fr) Procédé de fabrication de réseaux semi-conducteurs et réseaux obtenus
FR1355367A (fr) Procédé de fabrication de dispositifs semi-conducteurs et dispositifs obtenus
FR1421725A (fr) Procédé de fabrication de dispositifs transistors
FR1378542A (fr) Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus
FR1454690A (fr) Procédé de fabrication de dispositifs semi-conducteurs et dispositifs correspondants
FR82632E (fr) Procédé de fabrication de circuits électriques et circuits obtenus par ce procédé
FR1446395A (fr) Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus
FR1538402A (fr) Procédé de fabrication de dispositifs semi-conducteurs intégrés
FR1442009A (fr) Procédé de fabrication de dispositifs semi-conducteurs et nouveaux produits ainsi obtenus
FR1405067A (fr) Procédé de fabrication de dispositifs semi-conducteurs et nouveaux produits ainsi obtenus
FR1496985A (fr) Procédé de fabrication de semi-conducteurs munis de conducteurs de connexion et semi-conducteurs ainsi obtenus
FR1496764A (fr) Procédé de fabrication de dispositifs semi-conducteurs et nouveaux produits ainsi obtenus
FR1493540A (fr) Procédé pour la fabrication de dispositifs semi-conducteurs et dispositifs obtenus
FR1424690A (fr) Dispositifs semi-conducteurs et leur procédé de fabrication
FR1338169A (fr) Dispositifs semiconducteurs et leur procédé de fabrication
FR1419705A (fr) Procédés de fabrication de dispositifs semi-conducteurs et nouveaux dispositifs ainsi obtenus
FR1484390A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1520295A (fr) Procédé de fabrication de dispositifs semi-conducteurs à jonctions
FR1481283A (fr) Procédé de fabrication de circuits semiconducteurs intégrés
FR1201177A (fr) Procédé de fabrication de dispositifs semi-conducteurs et dispositifs ainsi obtenus
FR1412917A (fr) Procédé de fabrication de moules et moules ainsi obtenus