FR1440576A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
FR1440576A
FR1440576A FR25453A FR25453A FR1440576A FR 1440576 A FR1440576 A FR 1440576A FR 25453 A FR25453 A FR 25453A FR 25453 A FR25453 A FR 25453A FR 1440576 A FR1440576 A FR 1440576A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR25453A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Priority to FR25453A priority Critical patent/FR1440576A/en
Application granted granted Critical
Publication of FR1440576A publication Critical patent/FR1440576A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR25453A 1964-07-23 1965-07-21 Semiconductor device Expired FR1440576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR25453A FR1440576A (en) 1964-07-23 1965-07-21 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38476364A 1964-07-23 1964-07-23
FR25453A FR1440576A (en) 1964-07-23 1965-07-21 Semiconductor device

Publications (1)

Publication Number Publication Date
FR1440576A true FR1440576A (en) 1966-05-27

Family

ID=26164930

Family Applications (1)

Application Number Title Priority Date Filing Date
FR25453A Expired FR1440576A (en) 1964-07-23 1965-07-21 Semiconductor device

Country Status (1)

Country Link
FR (1) FR1440576A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460039A1 (en) * 1979-06-22 1981-01-16 France Etat Semiconductor component mfr. on amorphous substrate - by depositing basic multilayer structure before photoetching etc.
FR2472271A2 (en) * 1979-12-18 1981-06-26 France Etat Semiconductor component mfr. on amorphous substrate - by depositing basic multilayer structure before photoetching etc.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460039A1 (en) * 1979-06-22 1981-01-16 France Etat Semiconductor component mfr. on amorphous substrate - by depositing basic multilayer structure before photoetching etc.
FR2472271A2 (en) * 1979-12-18 1981-06-26 France Etat Semiconductor component mfr. on amorphous substrate - by depositing basic multilayer structure before photoetching etc.

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