FR1430601A - Memory device - Google Patents

Memory device

Info

Publication number
FR1430601A
FR1430601A FR11458A FR11458A FR1430601A FR 1430601 A FR1430601 A FR 1430601A FR 11458 A FR11458 A FR 11458A FR 11458 A FR11458 A FR 11458A FR 1430601 A FR1430601 A FR 1430601A
Authority
FR
France
Prior art keywords
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR11458A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Micro Electronics Inc
Original Assignee
General Micro Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US365913A external-priority patent/US3356860A/en
Application filed by General Micro Electronics Inc filed Critical General Micro Electronics Inc
Priority to FR11458A priority Critical patent/FR1430601A/en
Application granted granted Critical
Publication of FR1430601A publication Critical patent/FR1430601A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
FR11458A 1964-05-08 1965-03-31 Memory device Expired FR1430601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR11458A FR1430601A (en) 1964-05-08 1965-03-31 Memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US365913A US3356860A (en) 1964-05-08 1964-05-08 Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation
FR11458A FR1430601A (en) 1964-05-08 1965-03-31 Memory device

Publications (1)

Publication Number Publication Date
FR1430601A true FR1430601A (en) 1966-03-04

Family

ID=26162783

Family Applications (1)

Application Number Title Priority Date Filing Date
FR11458A Expired FR1430601A (en) 1964-05-08 1965-03-31 Memory device

Country Status (1)

Country Link
FR (1) FR1430601A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1920077A1 (en) 1968-04-23 1969-11-06 Philips Nv Capacitor overcharging device
DE1541954A1 (en) * 1966-10-25 1970-11-26 Philips Nv Capacitor overcharger
DE1967141A1 (en) * 1968-04-23 1977-11-03 Philips Nv INTEGRATED SEMICONDUCTOR CHARGE TRANSFER DEVICE

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1541954A1 (en) * 1966-10-25 1970-11-26 Philips Nv Capacitor overcharger
DE1920077A1 (en) 1968-04-23 1969-11-06 Philips Nv Capacitor overcharging device
DE1967141A1 (en) * 1968-04-23 1977-11-03 Philips Nv INTEGRATED SEMICONDUCTOR CHARGE TRANSFER DEVICE

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