FR1423235A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1423235A
FR1423235A FR3717A FR3717A FR1423235A FR 1423235 A FR1423235 A FR 1423235A FR 3717 A FR3717 A FR 3717A FR 3717 A FR3717 A FR 3717A FR 1423235 A FR1423235 A FR 1423235A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR3717A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1423235A publication Critical patent/FR1423235A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR3717A 1964-01-31 1965-01-29 Dispositif semi-conducteur Expired FR1423235A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34155864A 1964-01-31 1964-01-31

Publications (1)

Publication Number Publication Date
FR1423235A true FR1423235A (fr) 1966-01-03

Family

ID=23338083

Family Applications (1)

Application Number Title Priority Date Filing Date
FR3717A Expired FR1423235A (fr) 1964-01-31 1965-01-29 Dispositif semi-conducteur

Country Status (8)

Country Link
US (1) US3504239A (en, 2012)
JP (1) JPS4828112B1 (en, 2012)
BE (1) BE658963A (en, 2012)
DE (1) DE1514335B1 (en, 2012)
FR (1) FR1423235A (en, 2012)
GB (1) GB1097413A (en, 2012)
NL (1) NL139416B (en, 2012)
SE (1) SE335387B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2009108A1 (en, 2012) * 1968-05-22 1970-01-30 Rca Corp

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6706641A (en, 2012) * 1966-11-07 1968-11-13
US4008484A (en) * 1968-04-04 1977-02-15 Fujitsu Ltd. Semiconductor device having multilayered electrode structure
US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
US3868720A (en) * 1973-12-17 1975-02-25 Westinghouse Electric Corp High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
JPS5290273A (en) * 1976-01-23 1977-07-29 Hitachi Ltd Semiconductor device
JPS52132414U (en, 2012) * 1976-04-05 1977-10-07
JPS52132413U (en, 2012) * 1976-04-05 1977-10-07
JPS52132412U (en, 2012) * 1976-04-05 1977-10-07
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4420766A (en) * 1981-02-09 1983-12-13 Harris Corporation Reversibly programmable polycrystalline silicon memory element

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
BE520380A (en, 2012) * 1952-06-02
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2862115A (en) * 1955-07-13 1958-11-25 Bell Telephone Labor Inc Semiconductor circuit controlling devices
US2792540A (en) * 1955-08-04 1957-05-14 Bell Telephone Labor Inc Junction transistor
NL251064A (en, 2012) * 1955-11-04
US2905873A (en) * 1956-09-17 1959-09-22 Rca Corp Semiconductor power devices and method of manufacture
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
US2948835A (en) * 1958-10-21 1960-08-09 Texas Instruments Inc Transistor structure
US3013955A (en) * 1959-04-29 1961-12-19 Fairchild Camera Instr Co Method of transistor manufacture
NL264084A (en, 2012) * 1959-06-23
US3009085A (en) * 1959-11-19 1961-11-14 Richard L Petritz Cooled low noise, high frequency transistor
US3017520A (en) * 1960-07-01 1962-01-16 Honeywell Regulator Co Integral transistor-thermistor and circuit using same for compensating for changing transistor temperature
US3260900A (en) * 1961-04-27 1966-07-12 Merck & Co Inc Temperature compensating barrier layer semiconductor
US3183576A (en) * 1962-06-26 1965-05-18 Ibm Method of making transistor structures
NL296170A (en, 2012) * 1962-10-04
NL301034A (en, 2012) * 1962-11-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2009108A1 (en, 2012) * 1968-05-22 1970-01-30 Rca Corp

Also Published As

Publication number Publication date
DE1514335B1 (de) 1971-12-30
US3504239A (en) 1970-03-31
GB1097413A (en) 1968-01-03
BE658963A (en, 2012) 1965-05-17
JPS4828112B1 (en, 2012) 1973-08-29
NL139416B (nl) 1973-07-16
SE335387B (en, 2012) 1971-05-24
NL6501177A (en, 2012) 1965-08-02

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