FR1454807A - Dispositif semi-conducteur unipolaire - Google Patents

Dispositif semi-conducteur unipolaire

Info

Publication number
FR1454807A
FR1454807A FR39443A FR39443A FR1454807A FR 1454807 A FR1454807 A FR 1454807A FR 39443 A FR39443 A FR 39443A FR 39443 A FR39443 A FR 39443A FR 1454807 A FR1454807 A FR 1454807A
Authority
FR
France
Prior art keywords
semiconductor device
unipolar semiconductor
unipolar
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR39443A
Other languages
English (en)
Inventor
William Shockley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR1454807A publication Critical patent/FR1454807A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
FR39443A 1964-11-23 1965-11-23 Dispositif semi-conducteur unipolaire Expired FR1454807A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US412959A US3398334A (en) 1964-11-23 1964-11-23 Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions

Publications (1)

Publication Number Publication Date
FR1454807A true FR1454807A (fr) 1966-10-07

Family

ID=23635189

Family Applications (1)

Application Number Title Priority Date Filing Date
FR39443A Expired FR1454807A (fr) 1964-11-23 1965-11-23 Dispositif semi-conducteur unipolaire

Country Status (8)

Country Link
US (1) US3398334A (fr)
BE (1) BE672697A (fr)
CH (1) CH453506A (fr)
DE (1) DE1514061A1 (fr)
ES (1) ES319939A1 (fr)
FR (1) FR1454807A (fr)
GB (1) GB1103796A (fr)
NL (1) NL6515147A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4828114B1 (fr) * 1966-10-29 1973-08-29
CH516874A (de) * 1970-05-26 1971-12-15 Bbc Brown Boveri & Cie Halbleiterbauelement
DE7317598U (de) * 1972-06-09 1974-04-04 Bbc Ag Halbleiterbauelement
DE3441922C2 (de) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Fotokathode für den Infrarotbereich
DE3650250D1 (de) * 1985-07-12 1995-04-06 Hewlett Packard Co Detektor und mischdiode mit null-polarisationsspannung und herstellungsverfahren.
JPH0766981B2 (ja) * 1987-03-26 1995-07-19 日本電気株式会社 赤外線センサ
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
US8270131B2 (en) * 2009-07-31 2012-09-18 Infineon Technologies Ag Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same
US8530902B2 (en) 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91725C (fr) * 1952-12-16
US2838617A (en) * 1953-01-13 1958-06-10 Philips Corp Circuit-arrangement comprising a four-zone transistor
US2777101A (en) * 1955-08-01 1957-01-08 Cohen Jerrold Junction transistor
US2981849A (en) * 1956-01-09 1961-04-25 Itt Semiconductor diode
US2869084A (en) * 1956-07-20 1959-01-13 Bell Telephone Labor Inc Negative resistance semiconductive device
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
NL260007A (fr) * 1960-01-14
NL275617A (fr) * 1961-03-10
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices

Also Published As

Publication number Publication date
DE1514061A1 (de) 1969-06-12
GB1103796A (en) 1968-02-21
BE672697A (fr) 1966-05-23
ES319939A1 (es) 1966-05-01
US3398334A (en) 1968-08-20
NL6515147A (fr) 1966-05-24
CH453506A (de) 1968-06-14

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