BE672697A - - Google Patents

Info

Publication number
BE672697A
BE672697A BE672697DA BE672697A BE 672697 A BE672697 A BE 672697A BE 672697D A BE672697D A BE 672697DA BE 672697 A BE672697 A BE 672697A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE672697A publication Critical patent/BE672697A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8618Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/7606Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
BE672697D 1964-11-23 1965-11-23 BE672697A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US412959A US3398334A (en) 1964-11-23 1964-11-23 Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions

Publications (1)

Publication Number Publication Date
BE672697A true BE672697A (xx) 1966-05-23

Family

ID=23635189

Family Applications (1)

Application Number Title Priority Date Filing Date
BE672697D BE672697A (xx) 1964-11-23 1965-11-23

Country Status (8)

Country Link
US (1) US3398334A (xx)
BE (1) BE672697A (xx)
CH (1) CH453506A (xx)
DE (1) DE1514061A1 (xx)
ES (1) ES319939A1 (xx)
FR (1) FR1454807A (xx)
GB (1) GB1103796A (xx)
NL (1) NL6515147A (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4828114B1 (xx) * 1966-10-29 1973-08-29
CH516874A (de) * 1970-05-26 1971-12-15 Bbc Brown Boveri & Cie Halbleiterbauelement
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
DE3441922C2 (de) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Fotokathode für den Infrarotbereich
EP0235248B1 (en) * 1985-07-12 1995-03-01 Hewlett-Packard Company Detector and mixer diode operative at zero bias voltage and fabrication process therefor
JPH0766981B2 (ja) * 1987-03-26 1995-07-19 日本電気株式会社 赤外線センサ
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
US8270131B2 (en) * 2009-07-31 2012-09-18 Infineon Technologies Ag Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same
US8530902B2 (en) 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE524899A (xx) * 1952-12-16
US2838617A (en) * 1953-01-13 1958-06-10 Philips Corp Circuit-arrangement comprising a four-zone transistor
US2777101A (en) * 1955-08-01 1957-01-08 Cohen Jerrold Junction transistor
US2981849A (en) * 1956-01-09 1961-04-25 Itt Semiconductor diode
US2869084A (en) * 1956-07-20 1959-01-13 Bell Telephone Labor Inc Negative resistance semiconductive device
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
NL260007A (xx) * 1960-01-14
NL275617A (xx) * 1961-03-10
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices

Also Published As

Publication number Publication date
GB1103796A (en) 1968-02-21
US3398334A (en) 1968-08-20
NL6515147A (xx) 1966-05-24
FR1454807A (fr) 1966-10-07
ES319939A1 (es) 1966-05-01
CH453506A (de) 1968-06-14
DE1514061A1 (de) 1969-06-12

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