NL260007A - - Google Patents
Info
- Publication number
- NL260007A NL260007A NL260007DA NL260007A NL 260007 A NL260007 A NL 260007A NL 260007D A NL260007D A NL 260007DA NL 260007 A NL260007 A NL 260007A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE31360 | 1960-01-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL260007A true NL260007A (xx) |
Family
ID=20256348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL260007D NL260007A (xx) | 1960-01-14 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3140963A (xx) |
DE (1) | DE1213920B (xx) |
GB (1) | GB971261A (xx) |
NL (1) | NL260007A (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL300210A (xx) * | 1962-11-14 | |||
US3351826A (en) * | 1963-02-05 | 1967-11-07 | Leroy N Hermann | Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions |
FR1376515A (fr) * | 1963-05-14 | 1964-10-31 | Comp Generale Electricite | Dispositif de blocage-déblocage à fonctionnement symétrique |
NL296392A (xx) * | 1963-08-07 | |||
FR85434E (fr) * | 1963-12-12 | 1965-08-06 | Comp Generale Electricite | Perfectionnement aux dispositifs à semiconducteurs |
US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
US3328652A (en) * | 1964-07-20 | 1967-06-27 | Gen Electric | Voltage comparator |
US3398334A (en) * | 1964-11-23 | 1968-08-20 | Itt | Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions |
DE3239917A1 (de) * | 1982-10-28 | 1984-05-03 | Roman Efimovič Tomilino Moskovskaja oblast' Smoljanskij | Bipolares halbleiterbauelement |
US6365924B1 (en) * | 1998-06-19 | 2002-04-02 | National Semiconductor Corporation | Dual direction over-voltage and over-current IC protection device and its cell structure |
US7327541B1 (en) | 1998-06-19 | 2008-02-05 | National Semiconductor Corporation | Operation of dual-directional electrostatic discharge protection device |
JP4176564B2 (ja) * | 2003-06-23 | 2008-11-05 | 株式会社東芝 | ウェハ移載装置及びこれを用いた半導体装置の製造方法 |
FR2861228A1 (fr) * | 2003-10-17 | 2005-04-22 | St Microelectronics Sa | Structure de commutateur scr a commande hf |
CN106328518B (zh) * | 2016-11-21 | 2019-05-10 | 富芯微电子有限公司 | 一种调节双向可控硅触发电流的工艺方法及双向可控硅 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE523990A (xx) * | 1952-11-05 | |||
NL91993C (xx) * | 1952-12-01 | |||
DE1021082B (de) * | 1954-06-02 | 1957-12-19 | Siemens Ag | Flaechentransistor mit fuenf Elektroden, die an fuenf abwechselnd aufeinanderfolgenden Halbleiterschichten vom n-Typ und p-Typ anliegen, deren zweite und vierte Schicht als Basisschichten dienen |
US2927204A (en) * | 1957-01-22 | 1960-03-01 | Hazeltine Research Inc | Multiple unit transistor circuit with means for maintaining common zone at a fixed reference potential |
US2898454A (en) * | 1957-01-22 | 1959-08-04 | Hazeltine Research Inc | Five zone composite transistor with common zone grounded to prevent interaction |
US2980810A (en) * | 1957-12-30 | 1961-04-18 | Bell Telephone Labor Inc | Two-terminal semiconductive switch having five successive zones |
US2966434A (en) * | 1958-11-20 | 1960-12-27 | British Thomson Houston Co Ltd | Semi-conductor devices |
US2988677A (en) * | 1959-05-01 | 1961-06-13 | Ibm | Negative resistance semiconductor device structure |
-
0
- NL NL260007D patent/NL260007A/xx unknown
-
1961
- 1961-01-06 US US81147A patent/US3140963A/en not_active Expired - Lifetime
- 1961-01-13 DE DEA36487A patent/DE1213920B/de active Pending
- 1961-01-13 GB GB1469/61A patent/GB971261A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB971261A (en) | 1964-09-30 |
DE1213920B (de) | 1966-04-07 |
US3140963A (en) | 1964-07-14 |