FR1399908A - Procédé de fabrication des diodes tunnel et produit obtenu par ce procédé - Google Patents

Procédé de fabrication des diodes tunnel et produit obtenu par ce procédé

Info

Publication number
FR1399908A
FR1399908A FR979249A FR979249A FR1399908A FR 1399908 A FR1399908 A FR 1399908A FR 979249 A FR979249 A FR 979249A FR 979249 A FR979249 A FR 979249A FR 1399908 A FR1399908 A FR 1399908A
Authority
FR
France
Prior art keywords
product obtained
tunnel diodes
manufacturing process
manufacturing
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR979249A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1399908A publication Critical patent/FR1399908A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR979249A 1963-06-28 1964-06-23 Procédé de fabrication des diodes tunnel et produit obtenu par ce procédé Expired FR1399908A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US291430A US3291658A (en) 1963-06-28 1963-06-28 Process of making tunnel diodes that results in a peak current that is maintained over a long period of time

Publications (1)

Publication Number Publication Date
FR1399908A true FR1399908A (fr) 1965-05-21

Family

ID=23120258

Family Applications (1)

Application Number Title Priority Date Filing Date
FR979249A Expired FR1399908A (fr) 1963-06-28 1964-06-23 Procédé de fabrication des diodes tunnel et produit obtenu par ce procédé

Country Status (6)

Country Link
US (1) US3291658A (fr)
DE (1) DE1282189C2 (fr)
FR (1) FR1399908A (fr)
GB (1) GB1060755A (fr)
NL (1) NL6407169A (fr)
SE (1) SE329213B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2034715A1 (fr) * 1969-03-07 1970-12-11 North American Rockwell

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484657A (en) * 1966-07-11 1969-12-16 Susanna Gukasovna Madoian Semiconductor device having intermetallic compounds providing stable parameter vs. time characteristics
FR1527116A (fr) * 1967-04-18 1968-05-31 Cit Alcatel Procédé de fabrication des diodes par impulsions électriques
DE3112832A1 (de) * 1981-03-31 1982-10-14 Passavant-Werke AG & Co KG, 6209 Aarbergen Vorrichtung fuer den fluessigkeitsabzug aus becken o.dgl.

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
NL121810C (fr) * 1955-11-04
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
NL250955A (fr) * 1959-08-05
US3187193A (en) * 1959-10-15 1965-06-01 Rca Corp Multi-junction negative resistance semiconducting devices
US3197839A (en) * 1959-12-11 1965-08-03 Gen Electric Method of fabricating semiconductor devices
US3160534A (en) * 1960-10-03 1964-12-08 Gen Telephone & Elect Method of making tunnel diodes
FR1302265A (fr) * 1960-10-03 1962-08-24 Thomson Houston Comp Francaise Appareil à diode tunnel
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3030557A (en) * 1960-11-01 1962-04-17 Gen Telephone & Elect High frequency tunnel diode
US3150021A (en) * 1961-07-25 1964-09-22 Nippon Electric Co Method of manufacturing semiconductor devices
US3171042A (en) * 1961-09-08 1965-02-23 Bendix Corp Device with combination of unipolar means and tunnel diode means
NL288035A (fr) * 1962-01-24
US3245847A (en) * 1962-11-19 1966-04-12 Hughes Aircraft Co Method of producing stable gallium arsenide and semiconductor diodes made therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2034715A1 (fr) * 1969-03-07 1970-12-11 North American Rockwell

Also Published As

Publication number Publication date
DE1282189B (de) 1968-11-07
NL6407169A (fr) 1964-12-29
US3291658A (en) 1966-12-13
DE1282189C2 (de) 1969-07-10
SE329213B (fr) 1970-10-05
GB1060755A (en) 1967-03-08

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