FR1398471A - Jonction au carbure de silicium utilisable comme source de lumière, et procédé pour son établissement - Google Patents

Jonction au carbure de silicium utilisable comme source de lumière, et procédé pour son établissement

Info

Publication number
FR1398471A
FR1398471A FR977978A FR977978A FR1398471A FR 1398471 A FR1398471 A FR 1398471A FR 977978 A FR977978 A FR 977978A FR 977978 A FR977978 A FR 977978A FR 1398471 A FR1398471 A FR 1398471A
Authority
FR
France
Prior art keywords
establishment
light source
silicon carbide
carbide junction
junction usable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR977978A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Application granted granted Critical
Publication of FR1398471A publication Critical patent/FR1398471A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/166—Traveling solvent method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
FR977978A 1963-06-13 1964-06-11 Jonction au carbure de silicium utilisable comme source de lumière, et procédé pour son établissement Expired FR1398471A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28759163A 1963-06-13 1963-06-13

Publications (1)

Publication Number Publication Date
FR1398471A true FR1398471A (fr) 1965-05-07

Family

ID=23103561

Family Applications (1)

Application Number Title Priority Date Filing Date
FR977978A Expired FR1398471A (fr) 1963-06-13 1964-06-11 Jonction au carbure de silicium utilisable comme source de lumière, et procédé pour son établissement

Country Status (4)

Country Link
US (1) US3205101A (enrdf_load_stackoverflow)
BE (1) BE649024A (enrdf_load_stackoverflow)
FR (1) FR1398471A (enrdf_load_stackoverflow)
NL (1) NL6406340A (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1034503A (en) * 1963-05-14 1966-06-29 Nat Res Dev Improvements in or relating to the production of crystalline material
US3337375A (en) * 1964-04-13 1967-08-22 Sprague Electric Co Semiconductor method and device
US3396059A (en) * 1964-09-14 1968-08-06 Nat Res Corp Process of growing silicon carbide p-nu junction electroluminescing diodes using a modified travelling solvent method
US3333324A (en) * 1964-09-28 1967-08-01 Rca Corp Method of manufacturing semiconductor devices
US3429818A (en) * 1965-02-12 1969-02-25 Tyco Laboratories Inc Method of growing crystals
US3377210A (en) * 1965-03-25 1968-04-09 Norton Co Process of forming silicon carbide diode by growing separate p and n layers together
US3522164A (en) * 1965-10-21 1970-07-28 Texas Instruments Inc Semiconductor surface preparation and device fabrication
US3484302A (en) * 1966-01-18 1969-12-16 Fujitsu Ltd Method of growing semiconductor crystals
US3462321A (en) * 1966-04-27 1969-08-19 Nat Res Corp Process of epitaxial growth of silicon carbide
US3510733A (en) * 1966-05-13 1970-05-05 Gen Electric Semiconductive crystals of silicon carbide with improved chromium-containing electrical contacts
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
NL6615376A (enrdf_load_stackoverflow) * 1966-11-01 1968-05-02
US3956026A (en) * 1973-10-30 1976-05-11 General Electric Company Making a deep diode varactor by thermal migration
US3956024A (en) * 1973-10-30 1976-05-11 General Electric Company Process for making a semiconductor varistor embodying a lamellar structure
US3899361A (en) * 1973-10-30 1975-08-12 Gen Electric Stabilized droplet method of making deep diodes having uniform electrical properties
US3898106A (en) * 1973-10-30 1975-08-05 Gen Electric High velocity thermomigration method of making deep diodes
US3901736A (en) * 1973-10-30 1975-08-26 Gen Electric Method of making deep diode devices
US3975213A (en) * 1973-10-30 1976-08-17 General Electric Company High voltage diodes
US4063965A (en) * 1974-10-30 1977-12-20 General Electric Company Making deep power diodes
US4349407A (en) * 1979-05-09 1982-09-14 The United States Of America As Represented By The United States Department Of Energy Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE544843A (enrdf_load_stackoverflow) * 1955-02-25
US3030704A (en) * 1957-08-16 1962-04-24 Gen Electric Method of making non-rectifying contacts to silicon carbide
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US2996415A (en) * 1959-10-05 1961-08-15 Transitron Electronic Corp Method of purifying silicon carbide

Also Published As

Publication number Publication date
US3205101A (en) 1965-09-07
NL6406340A (enrdf_load_stackoverflow) 1964-12-14
BE649024A (enrdf_load_stackoverflow) 1964-10-01

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