BE649024A - - Google Patents
Info
- Publication number
- BE649024A BE649024A BE649024A BE649024A BE649024A BE 649024 A BE649024 A BE 649024A BE 649024 A BE649024 A BE 649024A BE 649024 A BE649024 A BE 649024A BE 649024 A BE649024 A BE 649024A
- Authority
- BE
- Belgium
- Prior art keywords
- junction
- silicon carbide
- solvent
- crystal
- crystals
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- 239000002904 solvent Substances 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 238000001953 recrystallisation Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000009833 condensation Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/166—Traveling solvent method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28759163A | 1963-06-13 | 1963-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE649024A true BE649024A (enrdf_load_stackoverflow) | 1964-10-01 |
Family
ID=23103561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE649024A BE649024A (enrdf_load_stackoverflow) | 1963-06-13 | 1964-06-09 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3205101A (enrdf_load_stackoverflow) |
| BE (1) | BE649024A (enrdf_load_stackoverflow) |
| FR (1) | FR1398471A (enrdf_load_stackoverflow) |
| NL (1) | NL6406340A (enrdf_load_stackoverflow) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1034503A (en) * | 1963-05-14 | 1966-06-29 | Nat Res Dev | Improvements in or relating to the production of crystalline material |
| US3337375A (en) * | 1964-04-13 | 1967-08-22 | Sprague Electric Co | Semiconductor method and device |
| US3396059A (en) * | 1964-09-14 | 1968-08-06 | Nat Res Corp | Process of growing silicon carbide p-nu junction electroluminescing diodes using a modified travelling solvent method |
| US3333324A (en) * | 1964-09-28 | 1967-08-01 | Rca Corp | Method of manufacturing semiconductor devices |
| US3429818A (en) * | 1965-02-12 | 1969-02-25 | Tyco Laboratories Inc | Method of growing crystals |
| US3377210A (en) * | 1965-03-25 | 1968-04-09 | Norton Co | Process of forming silicon carbide diode by growing separate p and n layers together |
| US3522164A (en) * | 1965-10-21 | 1970-07-28 | Texas Instruments Inc | Semiconductor surface preparation and device fabrication |
| US3484302A (en) * | 1966-01-18 | 1969-12-16 | Fujitsu Ltd | Method of growing semiconductor crystals |
| US3462321A (en) * | 1966-04-27 | 1969-08-19 | Nat Res Corp | Process of epitaxial growth of silicon carbide |
| US3510733A (en) * | 1966-05-13 | 1970-05-05 | Gen Electric | Semiconductive crystals of silicon carbide with improved chromium-containing electrical contacts |
| US3447976A (en) * | 1966-06-17 | 1969-06-03 | Westinghouse Electric Corp | Formation of heterojunction devices by epitaxial growth from solution |
| NL6615376A (enrdf_load_stackoverflow) * | 1966-11-01 | 1968-05-02 | ||
| US3956026A (en) * | 1973-10-30 | 1976-05-11 | General Electric Company | Making a deep diode varactor by thermal migration |
| US3956024A (en) * | 1973-10-30 | 1976-05-11 | General Electric Company | Process for making a semiconductor varistor embodying a lamellar structure |
| US3899361A (en) * | 1973-10-30 | 1975-08-12 | Gen Electric | Stabilized droplet method of making deep diodes having uniform electrical properties |
| US3898106A (en) * | 1973-10-30 | 1975-08-05 | Gen Electric | High velocity thermomigration method of making deep diodes |
| US3901736A (en) * | 1973-10-30 | 1975-08-26 | Gen Electric | Method of making deep diode devices |
| US3975213A (en) * | 1973-10-30 | 1976-08-17 | General Electric Company | High voltage diodes |
| US4063965A (en) * | 1974-10-30 | 1977-12-20 | General Electric Company | Making deep power diodes |
| US4349407A (en) * | 1979-05-09 | 1982-09-14 | The United States Of America As Represented By The United States Department Of Energy | Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent |
| US5225032A (en) * | 1991-08-09 | 1993-07-06 | Allied-Signal Inc. | Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE544843A (enrdf_load_stackoverflow) * | 1955-02-25 | |||
| US3030704A (en) * | 1957-08-16 | 1962-04-24 | Gen Electric | Method of making non-rectifying contacts to silicon carbide |
| US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
| US2996415A (en) * | 1959-10-05 | 1961-08-15 | Transitron Electronic Corp | Method of purifying silicon carbide |
-
1963
- 1963-06-13 US US287561A patent/US3205101A/en not_active Expired - Lifetime
-
1964
- 1964-06-04 NL NL6406340A patent/NL6406340A/xx unknown
- 1964-06-09 BE BE649024A patent/BE649024A/fr unknown
- 1964-06-11 FR FR977978A patent/FR1398471A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3205101A (en) | 1965-09-07 |
| NL6406340A (enrdf_load_stackoverflow) | 1964-12-14 |
| FR1398471A (fr) | 1965-05-07 |
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