FR1397790A - Diode tunnel présentant une caractéristique tunnel pour une polarisation inverse et méthode de fabrication - Google Patents
Diode tunnel présentant une caractéristique tunnel pour une polarisation inverse et méthode de fabricationInfo
- Publication number
- FR1397790A FR1397790A FR977182A FR977182A FR1397790A FR 1397790 A FR1397790 A FR 1397790A FR 977182 A FR977182 A FR 977182A FR 977182 A FR977182 A FR 977182A FR 1397790 A FR1397790 A FR 1397790A
- Authority
- FR
- France
- Prior art keywords
- tunnel
- manufacture
- reverse bias
- characteristic
- diode exhibiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001747 exhibiting effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US291473A US3278812A (en) | 1963-06-28 | 1963-06-28 | Tunnel diode with tunneling characteristic at reverse bias |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1397790A true FR1397790A (fr) | 1965-04-30 |
Family
ID=23120440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR977182A Expired FR1397790A (fr) | 1963-06-28 | 1964-06-05 | Diode tunnel présentant une caractéristique tunnel pour une polarisation inverse et méthode de fabrication |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2091988A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1970-03-31 | 1972-01-21 | Mitsumi Electric Co Ltd |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3947819A (en) * | 1974-12-31 | 1976-03-30 | United Audio Visual Corporation | Apparatus for expanding channel output capacity |
| JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
| DE4101686A1 (de) * | 1991-01-22 | 1992-07-23 | Merck Patent Gmbh | Indolderivate |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE25087E (en) * | 1961-11-21 | Abraham | ||
| BE532794A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1953-10-26 | |||
| US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
| US3015048A (en) * | 1959-05-22 | 1961-12-26 | Fairchild Camera Instr Co | Negative resistance transistor |
| US3133336A (en) * | 1959-12-30 | 1964-05-19 | Ibm | Semiconductor device fabrication |
| US3114864A (en) * | 1960-02-08 | 1963-12-17 | Fairchild Camera Instr Co | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions |
| GB991011A (en) * | 1962-09-03 | 1965-05-05 | Dowty Mining Equipment Ltd | Roof support assembly |
-
0
- DE DENDAT1250003D patent/DE1250003B/de active Pending
-
1963
- 1963-06-28 US US291473A patent/US3278812A/en not_active Expired - Lifetime
-
1964
- 1964-06-05 FR FR977182A patent/FR1397790A/fr not_active Expired
- 1964-06-24 NL NL6407168A patent/NL6407168A/xx unknown
- 1964-06-29 GB GB26780/64A patent/GB1075176A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2091988A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1970-03-31 | 1972-01-21 | Mitsumi Electric Co Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| US3278812A (en) | 1966-10-11 |
| GB1075176A (en) | 1967-07-12 |
| NL6407168A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1964-12-29 |
| DE1250003B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR1413586A (fr) | Structure de transistor perfectionné et méthode de fabrication | |
| FR1397015A (fr) | Perfectionnements aux pyromètres thermoélectriques | |
| FR1514276A (fr) | Méthode de fabrication de cuirs synthétiques du type suédé | |
| DK109682C (da) | Fremgangsmåde til fremstilling af en dør. | |
| DK117647B (da) | Halvlederkredsløb og fremgangsmåde til fremstilling af et sådant kredsløb. | |
| FR1397790A (fr) | Diode tunnel présentant une caractéristique tunnel pour une polarisation inverse et méthode de fabrication | |
| DK116521B (da) | Transistorkobling til tilvejebringelse af en høj spænding. | |
| CH441512A (fr) | Transistor latéral et procédé pour sa fabrication | |
| DK106447C (da) | Smørefedt og fremgangsmåde til fremstilling af et smørefedt. | |
| CH429951A (de) | Transistor | |
| FR1390594A (fr) | Diode à capacité et procédé pour sa fabrication | |
| FR1381871A (fr) | Méthode de fabrication de semi-conducteurs | |
| FR1489277A (fr) | Transistor à commutation rapide et méthode de fabrication | |
| DK117363B (da) | Drifttransistor og fremgangsmåde til fremstilling af en drifttransistor. | |
| AT249114B (de) | Transistor-Eingangsstufe eines Empfängers | |
| FR1381922A (fr) | Méthode de fabrication de semi-conducteurs | |
| FR1370892A (fr) | Méthode de formation de films métalliques supraconducteurs | |
| FR1429923A (fr) | Méthode de fabrication de fûts rectangulaires en tôle | |
| FR1381187A (fr) | Méthode de fabrication de semi-conducteurs | |
| FR86246E (fr) | Méthode de fabrication de semi-conducteurs | |
| CH409508A (de) | Pflückschlitten | |
| FR1359600A (fr) | Méthode de fabrication d'halogénures métalliques | |
| FR1380170A (fr) | Unité thermoélectrique et procédé pour sa fabrication | |
| FR1228423A (fr) | Perfectionnement aux méthodes de formation de jonctions dans un semi-conducteur | |
| FR1386849A (fr) | Méthode de dépôt pelliculaire |