NL6407168A - - Google Patents

Info

Publication number
NL6407168A
NL6407168A NL6407168A NL6407168A NL6407168A NL 6407168 A NL6407168 A NL 6407168A NL 6407168 A NL6407168 A NL 6407168A NL 6407168 A NL6407168 A NL 6407168A NL 6407168 A NL6407168 A NL 6407168A
Authority
NL
Netherlands
Application number
NL6407168A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6407168A publication Critical patent/NL6407168A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6407168A 1963-06-28 1964-06-24 NL6407168A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US291473A US3278812A (en) 1963-06-28 1963-06-28 Tunnel diode with tunneling characteristic at reverse bias

Publications (1)

Publication Number Publication Date
NL6407168A true NL6407168A (xx) 1964-12-29

Family

ID=23120440

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6407168A NL6407168A (xx) 1963-06-28 1964-06-24

Country Status (5)

Country Link
US (1) US3278812A (xx)
DE (1) DE1250003B (xx)
FR (1) FR1397790A (xx)
GB (1) GB1075176A (xx)
NL (1) NL6407168A (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7104206A (xx) * 1970-03-31 1971-10-04
US3947819A (en) * 1974-12-31 1976-03-30 United Audio Visual Corporation Apparatus for expanding channel output capacity
JPS5775464A (en) * 1980-10-28 1982-05-12 Semiconductor Res Found Semiconductor device controlled by tunnel injection
DE4101686A1 (de) * 1991-01-22 1992-07-23 Merck Patent Gmbh Indolderivate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE25087E (en) * 1961-11-21 Abraham
NL92060C (xx) * 1953-10-26
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US3015048A (en) * 1959-05-22 1961-12-26 Fairchild Camera Instr Co Negative resistance transistor
US3133336A (en) * 1959-12-30 1964-05-19 Ibm Semiconductor device fabrication
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
GB991011A (en) * 1962-09-03 1965-05-05 Dowty Mining Equipment Ltd Roof support assembly

Also Published As

Publication number Publication date
FR1397790A (fr) 1965-04-30
GB1075176A (en) 1967-07-12
US3278812A (en) 1966-10-11
DE1250003B (xx)

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