FR1396405A - Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium - Google Patents
Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germaniumInfo
- Publication number
- FR1396405A FR1396405A FR966620A FR966620A FR1396405A FR 1396405 A FR1396405 A FR 1396405A FR 966620 A FR966620 A FR 966620A FR 966620 A FR966620 A FR 966620A FR 1396405 A FR1396405 A FR 1396405A
- Authority
- FR
- France
- Prior art keywords
- forming
- semiconductor device
- oxide layer
- germanium semiconductor
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR966620A FR1396405A (fr) | 1964-03-09 | 1964-03-09 | Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium |
DE19651521700 DE1521700A1 (de) | 1964-03-09 | 1965-03-09 | Verfahren zur Erzeugung einer Oxydschicht auf der Oberflaeche einer Germanium-Halbleitervorrichtung |
GB10054/65A GB1034636A (en) | 1964-03-09 | 1965-03-09 | Process for forming an oxide layer on the surface of a germanium semi-conductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR966620A FR1396405A (fr) | 1964-03-09 | 1964-03-09 | Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1396405A true FR1396405A (fr) | 1965-04-23 |
Family
ID=8825022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR966620A Expired FR1396405A (fr) | 1964-03-09 | 1964-03-09 | Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1521700A1 (fr) |
FR (1) | FR1396405A (fr) |
GB (1) | GB1034636A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0427853A1 (fr) * | 1988-08-04 | 1991-05-22 | Osaka Sanso Kogyo Kabushiki-Kaisya | Procede et appareil d'oxydation de metaux |
-
1964
- 1964-03-09 FR FR966620A patent/FR1396405A/fr not_active Expired
-
1965
- 1965-03-09 GB GB10054/65A patent/GB1034636A/en not_active Expired
- 1965-03-09 DE DE19651521700 patent/DE1521700A1/de active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0427853A1 (fr) * | 1988-08-04 | 1991-05-22 | Osaka Sanso Kogyo Kabushiki-Kaisya | Procede et appareil d'oxydation de metaux |
EP0427853A4 (en) * | 1988-08-04 | 1991-11-13 | Osaka Sanso Kogyo Kabushiki-Kaisya | Metal oxidation apparatus and method |
US5226968A (en) * | 1988-08-04 | 1993-07-13 | Tadahiro Ohmi | Apparatus and method for oxidation treatment of metal |
Also Published As
Publication number | Publication date |
---|---|
GB1034636A (en) | 1966-06-29 |
DE1521700A1 (de) | 1970-02-05 |
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