FR1396405A - Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium - Google Patents

Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium

Info

Publication number
FR1396405A
FR1396405A FR966620A FR966620A FR1396405A FR 1396405 A FR1396405 A FR 1396405A FR 966620 A FR966620 A FR 966620A FR 966620 A FR966620 A FR 966620A FR 1396405 A FR1396405 A FR 1396405A
Authority
FR
France
Prior art keywords
forming
semiconductor device
oxide layer
germanium semiconductor
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR966620A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR966620A priority Critical patent/FR1396405A/fr
Priority to DE19651521700 priority patent/DE1521700A1/de
Priority to GB10054/65A priority patent/GB1034636A/en
Application granted granted Critical
Publication of FR1396405A publication Critical patent/FR1396405A/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10Oxidising
    • C23C8/16Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
FR966620A 1964-03-09 1964-03-09 Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium Expired FR1396405A (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR966620A FR1396405A (fr) 1964-03-09 1964-03-09 Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium
DE19651521700 DE1521700A1 (de) 1964-03-09 1965-03-09 Verfahren zur Erzeugung einer Oxydschicht auf der Oberflaeche einer Germanium-Halbleitervorrichtung
GB10054/65A GB1034636A (en) 1964-03-09 1965-03-09 Process for forming an oxide layer on the surface of a germanium semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR966620A FR1396405A (fr) 1964-03-09 1964-03-09 Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium

Publications (1)

Publication Number Publication Date
FR1396405A true FR1396405A (fr) 1965-04-23

Family

ID=8825022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR966620A Expired FR1396405A (fr) 1964-03-09 1964-03-09 Procédé de formation d'une couche d'oxyde sur une surface d'un dispositif à semiconducteur en germanium

Country Status (3)

Country Link
DE (1) DE1521700A1 (fr)
FR (1) FR1396405A (fr)
GB (1) GB1034636A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0427853A1 (fr) * 1988-08-04 1991-05-22 Osaka Sanso Kogyo Kabushiki-Kaisya Procede et appareil d'oxydation de metaux

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0427853A1 (fr) * 1988-08-04 1991-05-22 Osaka Sanso Kogyo Kabushiki-Kaisya Procede et appareil d'oxydation de metaux
EP0427853A4 (en) * 1988-08-04 1991-11-13 Osaka Sanso Kogyo Kabushiki-Kaisya Metal oxidation apparatus and method
US5226968A (en) * 1988-08-04 1993-07-13 Tadahiro Ohmi Apparatus and method for oxidation treatment of metal

Also Published As

Publication number Publication date
GB1034636A (en) 1966-06-29
DE1521700A1 (de) 1970-02-05

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