FR1372252A - Diode semiconductrice à l'arséniure de gallium et procédé pour sa fabrication - Google Patents
Diode semiconductrice à l'arséniure de gallium et procédé pour sa fabricationInfo
- Publication number
- FR1372252A FR1372252A FR950819A FR950819A FR1372252A FR 1372252 A FR1372252 A FR 1372252A FR 950819 A FR950819 A FR 950819A FR 950819 A FR950819 A FR 950819A FR 1372252 A FR1372252 A FR 1372252A
- Authority
- FR
- France
- Prior art keywords
- manufacture
- gallium arsenide
- semiconductor diode
- arsenide semiconductor
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23251162A | 1962-10-23 | 1962-10-23 | |
| US279788A US3271636A (en) | 1962-10-23 | 1963-05-13 | Gallium arsenide semiconductor diode and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1372252A true FR1372252A (fr) | 1964-09-11 |
Family
ID=26926066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR950819A Expired FR1372252A (fr) | 1962-10-23 | 1963-10-16 | Diode semiconductrice à l'arséniure de gallium et procédé pour sa fabrication |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3271636A (en:Method) |
| BE (1) | BE638992A (en:Method) |
| DE (1) | DE1439952A1 (en:Method) |
| FR (1) | FR1372252A (en:Method) |
| GB (1) | GB1057817A (en:Method) |
| NL (1) | NL299561A (en:Method) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1030670A (en) * | 1964-12-02 | 1966-05-25 | Standard Telephones Cables Ltd | Semiconductor devices |
| FR1489613A (en:Method) * | 1965-08-19 | 1967-11-13 | ||
| US3457473A (en) * | 1965-11-10 | 1969-07-22 | Nippon Electric Co | Semiconductor device with schottky barrier formed on (100) plane of gaas |
| US3476984A (en) * | 1966-11-10 | 1969-11-04 | Solitron Devices | Schottky barrier semiconductor device |
| US3523223A (en) * | 1967-11-01 | 1970-08-04 | Texas Instruments Inc | Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing |
| US3506893A (en) * | 1968-06-27 | 1970-04-14 | Ibm | Integrated circuits with surface barrier diodes |
| US3562606A (en) * | 1969-08-13 | 1971-02-09 | Varian Associates | Subsurface gallium arsenide schottky-type diode and method of fabricating same |
| US3656030A (en) * | 1970-09-11 | 1972-04-11 | Rca Corp | Semiconductor device with plurality of small area contacts |
| EP1950326A1 (en) | 2007-01-29 | 2008-07-30 | Interuniversitair Microelektronica Centrum | Method for removal of bulk metal contamination from III-V semiconductor substrates |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE575275A (en:Method) * | 1958-02-03 | 1900-01-01 | ||
| US3160539A (en) * | 1958-09-08 | 1964-12-08 | Trw Semiconductors Inc | Surface treatment of silicon |
| DE1071846B (en:Method) * | 1959-01-03 | 1959-12-24 | ||
| US3015048A (en) * | 1959-05-22 | 1961-12-26 | Fairchild Camera Instr Co | Negative resistance transistor |
| NL260298A (en:Method) * | 1960-01-20 | |||
| US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
| US3110849A (en) * | 1960-10-03 | 1963-11-12 | Gen Electric | Tunnel diode device |
-
1963
- 1963-05-13 US US279788A patent/US3271636A/en not_active Expired - Lifetime
- 1963-10-12 DE DE19631439952 patent/DE1439952A1/de active Pending
- 1963-10-16 FR FR950819A patent/FR1372252A/fr not_active Expired
- 1963-10-17 GB GB41009/63A patent/GB1057817A/en not_active Expired
- 1963-10-22 NL NL299561A patent/NL299561A/xx unknown
- 1963-10-22 BE BE638992D patent/BE638992A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL299561A (en:Method) | 1965-08-25 |
| GB1057817A (en) | 1967-02-08 |
| BE638992A (en:Method) | 1964-02-17 |
| US3271636A (en) | 1966-09-06 |
| DE1439952A1 (de) | 1969-01-16 |
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