FR1351690A - Dispositif électrique amplificateur et son procédé de fabrication - Google Patents
Dispositif électrique amplificateur et son procédé de fabricationInfo
- Publication number
- FR1351690A FR1351690A FR924856A FR924856A FR1351690A FR 1351690 A FR1351690 A FR 1351690A FR 924856 A FR924856 A FR 924856A FR 924856 A FR924856 A FR 924856A FR 1351690 A FR1351690 A FR 1351690A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- electrical device
- amplifier electrical
- amplifier
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Cold Cathode And The Manufacture (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US206499A US3204161A (en) | 1962-06-29 | 1962-06-29 | Thin film signal translating device utilizing emitter comprising: cds film, insulating layer, and means for applying potential thereacross |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1351690A true FR1351690A (fr) | 1964-02-07 |
Family
ID=22766670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR924856A Expired FR1351690A (fr) | 1962-06-29 | 1963-02-14 | Dispositif électrique amplificateur et son procédé de fabrication |
Country Status (4)
Country | Link |
---|---|
US (1) | US3204161A (fr) |
DE (1) | DE1226229B (fr) |
FR (1) | FR1351690A (fr) |
GB (1) | GB1035785A (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3304471A (en) * | 1963-01-28 | 1967-02-14 | Hughes Aircraft Co | Thin film diode |
US3320651A (en) * | 1963-04-03 | 1967-05-23 | Gen Motors Corp | Method for making cadmium sulphide field effect transistor |
US3310685A (en) * | 1963-05-03 | 1967-03-21 | Gtc Kk | Narrow band emitter devices |
US3292058A (en) * | 1963-06-04 | 1966-12-13 | Sperry Rand Corp | Thin film controlled emission amplifier |
US3391309A (en) * | 1963-07-15 | 1968-07-02 | Melpar Inc | Solid state cathode |
US3293512A (en) * | 1963-09-20 | 1966-12-20 | Burroughs Corp | Thin film, solid state amplifier with source and drain on opposite sides of the semiconductor layer |
US3319137A (en) * | 1964-10-30 | 1967-05-09 | Hughes Aircraft Co | Thin film negative resistance device |
US3440499A (en) * | 1966-03-21 | 1969-04-22 | Germano Fasano | Thin-film rectifying device comprising a layer of cef3 between a metal and cds layer |
GB1482954A (en) * | 1973-08-20 | 1977-08-17 | Massachusetts Inst Technology | Electronic device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US929582A (en) * | 1908-09-10 | 1909-07-27 | William P Mashinter | Electric-current rectifier. |
US1751360A (en) * | 1924-09-22 | 1930-03-18 | Ruben Rectifier Corp | Electric-current rectifier |
US2874308A (en) * | 1956-07-02 | 1959-02-17 | Sylvania Electric Prod | Electroluminescent device |
US2936252A (en) * | 1956-09-24 | 1960-05-10 | Electronique & Automatisme Sa | Preparation of layers of electroluminescent materials |
US3056073A (en) * | 1960-02-15 | 1962-09-25 | California Inst Res Found | Solid-state electron devices |
US3116427A (en) * | 1960-07-05 | 1963-12-31 | Gen Electric | Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive |
-
1962
- 1962-06-29 US US206499A patent/US3204161A/en not_active Expired - Lifetime
-
1963
- 1963-02-14 FR FR924856A patent/FR1351690A/fr not_active Expired
- 1963-06-28 DE DEP32095A patent/DE1226229B/de active Pending
- 1963-07-01 GB GB25989/63A patent/GB1035785A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1226229B (de) | 1966-10-06 |
GB1035785A (en) | 1966-07-13 |
US3204161A (en) | 1965-08-31 |
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