GB1482954A - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- GB1482954A GB1482954A GB36645/74A GB3664574A GB1482954A GB 1482954 A GB1482954 A GB 1482954A GB 36645/74 A GB36645/74 A GB 36645/74A GB 3664574 A GB3664574 A GB 3664574A GB 1482954 A GB1482954 A GB 1482954A
- Authority
- GB
- United Kingdom
- Prior art keywords
- dielectric layer
- junction
- aug
- imaging devices
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 3
- 238000003384 imaging method Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000003491 array Methods 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
1482954 Solid state electrical devices MASSACHUSETTS INSTITUTE OF TECHNOLOGY 20 Aug 1974 [20 Aug 1973 11 June 1974] 36645/74 Heading H1K [Also in Division H3] In an electronic device comprising, on a substrate 120, Fig. 1a, first and second metal layers 124, 128 mutually separated at an area of overlap by a dielectric layer 126 to form a junction across which quantum mechanical tunnelling can occur thereby providing a non-linear I-V characteristic, the area of the junction is at most of the order of 1 micron<SP>2</SP> and the thickness of the dielectric layer is less than about 10A. The very low junction capacitance permits operation at frequencies of the order of 10<SP>12</SP> Hz and higher. One or both of the metals may be superconducting, but in the preferred embodiments selection is made from one or more of W, Cu, Ni, Al and Cr, the dielectric layer being formed by deposition or by oxidation of the first metal layer 124. Reference is made to doping of the dielectric layer with H 2 O D 2 O or methyl alcohol. Fig. 3 illustrates a triode embodiment including three metal layers 14, 20, 26 adjacent pairs of which are separated by respective dielectric layers 16, 22. The central metal layer 20 may be unconnected to any external terminal, in which case the device functions as a negative resistance diode. Numerous applications are described, including oscillators, radiation sources, radiation detectors including imaging devices and solar arrays, parametric amplifiers, multi-vibrators, frequency subdividers and mixers and holographic imaging devices (see Division H3).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US389783A US3898453A (en) | 1970-08-10 | 1973-08-20 | Solid state optical junction devices and arrays and systems incorporating same |
| US05/478,236 US3947681A (en) | 1970-08-10 | 1974-06-11 | Electron tunneling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1482954A true GB1482954A (en) | 1977-08-17 |
Family
ID=27012838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36645/74A Expired GB1482954A (en) | 1973-08-20 | 1974-08-20 | Electronic device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS597235B2 (en) |
| CA (1) | CA1023040A (en) |
| DE (1) | DE2439921A1 (en) |
| GB (1) | GB1482954A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2225505A (en) * | 1988-07-07 | 1990-05-30 | Jeremy Kenneth Arthur Everard | Low noise optoelectronic correlators and mixers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5276865A (en) * | 1975-12-22 | 1977-06-28 | Tokyo Daigaku | Ultrahigh speed detector* frequency mixer and frequency multiplier |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3056073A (en) * | 1960-02-15 | 1962-09-25 | California Inst Res Found | Solid-state electron devices |
| US3204161A (en) * | 1962-06-29 | 1965-08-31 | Philco Corp | Thin film signal translating device utilizing emitter comprising: cds film, insulating layer, and means for applying potential thereacross |
-
1974
- 1974-08-20 JP JP49095481A patent/JPS597235B2/en not_active Expired
- 1974-08-20 CA CA207,448A patent/CA1023040A/en not_active Expired
- 1974-08-20 DE DE2439921A patent/DE2439921A1/en not_active Withdrawn
- 1974-08-20 GB GB36645/74A patent/GB1482954A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2225505A (en) * | 1988-07-07 | 1990-05-30 | Jeremy Kenneth Arthur Everard | Low noise optoelectronic correlators and mixers |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2439921A1 (en) | 1975-03-13 |
| CA1023040A (en) | 1977-12-20 |
| JPS5051278A (en) | 1975-05-08 |
| JPS597235B2 (en) | 1984-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |