FR1349905A - Circuits solides à dispositifs à effet de champ dits gridistors - Google Patents

Circuits solides à dispositifs à effet de champ dits gridistors

Info

Publication number
FR1349905A
FR1349905A FR906102A FR906102A FR1349905A FR 1349905 A FR1349905 A FR 1349905A FR 906102 A FR906102 A FR 906102A FR 906102 A FR906102 A FR 906102A FR 1349905 A FR1349905 A FR 1349905A
Authority
FR
France
Prior art keywords
gridistors
called
solid circuits
circuits
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR906102A
Other languages
English (en)
Inventor
Rene Charles Sueur
Stanislas Teszner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL128995D priority Critical patent/NL128995C/xx
Priority to NL296208D priority patent/NL296208A/xx
Application filed filed Critical
Priority to FR906102A priority patent/FR1349905A/fr
Priority to US298351A priority patent/US3176192A/en
Priority to DE19631439268 priority patent/DE1439268B1/de
Priority to CH969663A priority patent/CH442553A/fr
Priority to GB30745/63A priority patent/GB1019213A/en
Application granted granted Critical
Publication of FR1349905A publication Critical patent/FR1349905A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
FR906102A 1962-08-03 1962-08-03 Circuits solides à dispositifs à effet de champ dits gridistors Expired FR1349905A (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL128995D NL128995C (fr) 1962-08-03
NL296208D NL296208A (fr) 1962-08-03
FR906102A FR1349905A (fr) 1962-08-03 1962-08-03 Circuits solides à dispositifs à effet de champ dits gridistors
US298351A US3176192A (en) 1962-08-03 1963-07-29 Integrated circuits comprising field-effect devices
DE19631439268 DE1439268B1 (de) 1962-08-03 1963-08-01 Integrierte Halbleiterschaltungsanordnung
CH969663A CH442553A (fr) 1962-08-03 1963-08-02 Circuit solide à dispositifs à effet de champ
GB30745/63A GB1019213A (en) 1962-08-03 1963-08-02 Solid circuits comprising field-effect devices known as gridistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR906102A FR1349905A (fr) 1962-08-03 1962-08-03 Circuits solides à dispositifs à effet de champ dits gridistors

Publications (1)

Publication Number Publication Date
FR1349905A true FR1349905A (fr) 1964-01-24

Family

ID=8784616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR906102A Expired FR1349905A (fr) 1962-08-03 1962-08-03 Circuits solides à dispositifs à effet de champ dits gridistors

Country Status (6)

Country Link
US (1) US3176192A (fr)
CH (1) CH442553A (fr)
DE (1) DE1439268B1 (fr)
FR (1) FR1349905A (fr)
GB (1) GB1019213A (fr)
NL (2) NL128995C (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136562C (fr) * 1963-10-24
US3320485A (en) * 1964-03-30 1967-05-16 Trw Inc Dielectric isolation for monolithic circuit
US3381188A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Planar multi-channel field-effect triode
US3381187A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co High-frequency field-effect triode device
US3381189A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Mesa multi-channel field-effect triode
US3354362A (en) * 1965-03-23 1967-11-21 Hughes Aircraft Co Planar multi-channel field-effect tetrode
JPS50146449U (fr) * 1974-05-21 1975-12-04
GB201111123D0 (en) 2011-06-29 2011-08-10 R2Tek Llc Drive scheme for cholesteric liquid crystal display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor
NL123416C (fr) * 1960-05-02
NL264274A (fr) * 1960-05-02 1900-01-01
US3134912A (en) * 1960-05-02 1964-05-26 Texas Instruments Inc Multivibrator employing field effect devices as transistors and voltage variable resistors in integrated semiconductive structure

Also Published As

Publication number Publication date
GB1019213A (en) 1966-02-02
CH442553A (fr) 1967-08-31
US3176192A (en) 1965-03-30
DE1439268B1 (de) 1971-01-14
NL128995C (fr)
NL296208A (fr)

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