FR1347395A - Dispositif semi-conducteur à effet de champ et son procédé de fabrication - Google Patents
Dispositif semi-conducteur à effet de champ et son procédé de fabricationInfo
- Publication number
- FR1347395A FR1347395A FR922155A FR922155A FR1347395A FR 1347395 A FR1347395 A FR 1347395A FR 922155 A FR922155 A FR 922155A FR 922155 A FR922155 A FR 922155A FR 1347395 A FR1347395 A FR 1347395A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- field
- semiconductor device
- effect semiconductor
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17397062A | 1962-02-19 | 1962-02-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1347395A true FR1347395A (fr) | 1963-12-27 |
Family
ID=32092255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR922155A Expired FR1347395A (fr) | 1962-02-19 | 1963-01-22 | Dispositif semi-conducteur à effet de champ et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE627499A (xx) |
DE (1) | DE1237693B (xx) |
FR (1) | FR1347395A (xx) |
GB (1) | GB997996A (xx) |
NL (1) | NL288745A (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1614861C3 (de) * | 1967-09-01 | 1982-03-11 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors |
EP0268426A3 (en) * | 1986-11-17 | 1989-03-15 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
USRE34821E (en) * | 1986-11-17 | 1995-01-03 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509317A (xx) * | 1951-03-07 | 1900-01-01 | ||
FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
FR1293699A (fr) * | 1960-05-02 | 1962-05-18 | Westinghouse Electric Corp | Dispositif semi-conducteur |
-
0
- NL NL288745D patent/NL288745A/xx unknown
-
1963
- 1963-01-16 GB GB198163A patent/GB997996A/en not_active Expired
- 1963-01-22 FR FR922155A patent/FR1347395A/fr not_active Expired
- 1963-01-24 BE BE627499D patent/BE627499A/xx unknown
- 1963-02-18 DE DE1963M0055822 patent/DE1237693B/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB997996A (en) | 1965-07-14 |
BE627499A (xx) | 1963-05-15 |
DE1237693B (de) | 1967-03-30 |
NL288745A (xx) |
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