FR1336191A - Procédé de formation d'une couche de barrage sur un monocristal de sulfure de cadmim - Google Patents
Procédé de formation d'une couche de barrage sur un monocristal de sulfure de cadmimInfo
- Publication number
- FR1336191A FR1336191A FR903516A FR903516A FR1336191A FR 1336191 A FR1336191 A FR 1336191A FR 903516 A FR903516 A FR 903516A FR 903516 A FR903516 A FR 903516A FR 1336191 A FR1336191 A FR 1336191A
- Authority
- FR
- France
- Prior art keywords
- cadmim
- forming
- barrier layer
- single crystal
- sulfide single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title 1
- 230000004888 barrier function Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US122751A US3146138A (en) | 1961-07-10 | 1961-07-10 | Vacuum evaporated barrier for a cds crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1336191A true FR1336191A (fr) | 1963-08-30 |
Family
ID=22404548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR903516A Expired FR1336191A (fr) | 1961-07-10 | 1962-07-10 | Procédé de formation d'une couche de barrage sur un monocristal de sulfure de cadmim |
Country Status (3)
Country | Link |
---|---|
US (1) | US3146138A (fr) |
FR (1) | FR1336191A (fr) |
NL (1) | NL280579A (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3329823A (en) * | 1963-12-12 | 1967-07-04 | Westinghouse Electric Corp | Solid state thin film photosensitive device with tunnel barriers |
US3435236A (en) * | 1967-03-21 | 1969-03-25 | Us Air Force | High ohmic semiconductor tuned narrow bandpass barrier photodiode |
US3902920A (en) * | 1972-11-03 | 1975-09-02 | Baldwin Co D H | Photovoltaic cell |
DE2253831C3 (de) * | 1972-11-03 | 1981-01-22 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Solarzellenbatterie |
US4000502A (en) * | 1973-11-05 | 1976-12-28 | General Dynamics Corporation | Solid state radiation detector and process |
US4120705A (en) * | 1975-03-28 | 1978-10-17 | Westinghouse Electric Corp. | Vacuum deposition process for fabricating a CdS--Cu2 S heterojunction solar cell device |
US4139857A (en) * | 1975-07-18 | 1979-02-13 | Futaba Denshi Kogyo Kabushiki Kaisha | Schottky barrier type solid-state element |
US4157926A (en) * | 1977-02-24 | 1979-06-12 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricating a high electrical frequency infrared detector by vacuum deposition |
US4319258A (en) * | 1980-03-07 | 1982-03-09 | General Dynamics, Pomona Division | Schottky barrier photovoltaic detector |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2736848A (en) * | 1949-03-03 | 1956-02-28 | Rca Corp | Photocells |
US2743430A (en) * | 1952-03-01 | 1956-04-24 | Rca Corp | Information storage devices |
US2742376A (en) * | 1953-08-24 | 1956-04-17 | Rca Corp | Method of applying luminescent coatings |
US2810052A (en) * | 1953-08-28 | 1957-10-15 | Rca Corp | Electrical devices, including cadmium sulphide and cadmium selenide containing trivalent cations |
US2916678A (en) * | 1954-06-23 | 1959-12-08 | Rca Corp | Single crystal photoconducting photocells and methods of preparation thereof |
US2820841A (en) * | 1956-05-10 | 1958-01-21 | Clevite Corp | Photovoltaic cells and methods of fabricating same |
US2844640A (en) * | 1956-05-11 | 1958-07-22 | Donald C Reynolds | Cadmium sulfide barrier layer cell |
US3009841A (en) * | 1959-03-06 | 1961-11-21 | Westinghouse Electric Corp | Preparation of semiconductor devices having uniform junctions |
US3062750A (en) * | 1959-08-19 | 1962-11-06 | Du Pont | Treatment of zinc sulfide phosphors |
-
0
- NL NL280579D patent/NL280579A/xx unknown
-
1961
- 1961-07-10 US US122751A patent/US3146138A/en not_active Expired - Lifetime
-
1962
- 1962-07-10 FR FR903516A patent/FR1336191A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL280579A (fr) | |
US3146138A (en) | 1964-08-25 |
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