FR1308356A - Method for controlling the doping of a vapor-growing semiconductor body - Google Patents
Method for controlling the doping of a vapor-growing semiconductor bodyInfo
- Publication number
- FR1308356A FR1308356A FR882533A FR882533A FR1308356A FR 1308356 A FR1308356 A FR 1308356A FR 882533 A FR882533 A FR 882533A FR 882533 A FR882533 A FR 882533A FR 1308356 A FR1308356 A FR 1308356A
- Authority
- FR
- France
- Prior art keywords
- doping
- vapor
- controlling
- semiconductor body
- growing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR882533A FR1308356A (en) | 1960-12-30 | 1961-12-20 | Method for controlling the doping of a vapor-growing semiconductor body |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79896A US3184348A (en) | 1960-12-30 | 1960-12-30 | Method for controlling doping in vaporgrown semiconductor bodies |
FR882533A FR1308356A (en) | 1960-12-30 | 1961-12-20 | Method for controlling the doping of a vapor-growing semiconductor body |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1308356A true FR1308356A (en) | 1962-11-03 |
Family
ID=26193588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR882533A Expired FR1308356A (en) | 1960-12-30 | 1961-12-20 | Method for controlling the doping of a vapor-growing semiconductor body |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1308356A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0068839A1 (en) * | 1981-06-29 | 1983-01-05 | Fujitsu Limited | Method and apparatus for vapor phase growth of a semiconductor |
-
1961
- 1961-12-20 FR FR882533A patent/FR1308356A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0068839A1 (en) * | 1981-06-29 | 1983-01-05 | Fujitsu Limited | Method and apparatus for vapor phase growth of a semiconductor |
US4507169A (en) * | 1981-06-29 | 1985-03-26 | Fujitsu Limited | Method and apparatus for vapor phase growth of a semiconductor |
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