FR1291301A - A method of manufacturing an electrode device comprising a semiconductor body of gallium arsenide - Google Patents
A method of manufacturing an electrode device comprising a semiconductor body of gallium arsenideInfo
- Publication number
- FR1291301A FR1291301A FR863940A FR863940A FR1291301A FR 1291301 A FR1291301 A FR 1291301A FR 863940 A FR863940 A FR 863940A FR 863940 A FR863940 A FR 863940A FR 1291301 A FR1291301 A FR 1291301A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor body
- gallium arsenide
- electrode device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR863940A FR1291301A (en) | 1960-06-07 | 1961-06-05 | A method of manufacturing an electrode device comprising a semiconductor body of gallium arsenide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL252383 | 1960-06-07 | ||
FR863940A FR1291301A (en) | 1960-06-07 | 1961-06-05 | A method of manufacturing an electrode device comprising a semiconductor body of gallium arsenide |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1291301A true FR1291301A (en) | 1962-04-20 |
Family
ID=26190900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR863940A Expired FR1291301A (en) | 1960-06-07 | 1961-06-05 | A method of manufacturing an electrode device comprising a semiconductor body of gallium arsenide |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1291301A (en) |
-
1961
- 1961-06-05 FR FR863940A patent/FR1291301A/en not_active Expired
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