FR1375673A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
FR1375673A
FR1375673A FR894442A FR894442A FR1375673A FR 1375673 A FR1375673 A FR 1375673A FR 894442 A FR894442 A FR 894442A FR 894442 A FR894442 A FR 894442A FR 1375673 A FR1375673 A FR 1375673A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR894442A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Priority to FR894442A priority Critical patent/FR1375673A/en
Application granted granted Critical
Publication of FR1375673A publication Critical patent/FR1375673A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/50
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P14/24
    • H10P14/2905
    • H10P14/3411
    • H10P14/3414
    • H10P32/00
    • H10P95/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR894442A 1961-04-14 1962-04-13 Method of manufacturing a semiconductor device Expired FR1375673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR894442A FR1375673A (en) 1961-04-14 1962-04-13 Method of manufacturing a semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0073482 1961-04-14
FR894442A FR1375673A (en) 1961-04-14 1962-04-13 Method of manufacturing a semiconductor device

Publications (1)

Publication Number Publication Date
FR1375673A true FR1375673A (en) 1964-10-23

Family

ID=25996406

Family Applications (1)

Application Number Title Priority Date Filing Date
FR894442A Expired FR1375673A (en) 1961-04-14 1962-04-13 Method of manufacturing a semiconductor device

Country Status (1)

Country Link
FR (1) FR1375673A (en)

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