FR1290092A - Perfectionnements aux semi-conducteurs redresseurs - Google Patents

Perfectionnements aux semi-conducteurs redresseurs

Info

Publication number
FR1290092A
FR1290092A FR863373A FR863373A FR1290092A FR 1290092 A FR1290092 A FR 1290092A FR 863373 A FR863373 A FR 863373A FR 863373 A FR863373 A FR 863373A FR 1290092 A FR1290092 A FR 1290092A
Authority
FR
France
Prior art keywords
semiconductor rectifiers
rectifiers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR863373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to FR863373A priority Critical patent/FR1290092A/fr
Application granted granted Critical
Publication of FR1290092A publication Critical patent/FR1290092A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR863373A 1960-06-03 1961-05-30 Perfectionnements aux semi-conducteurs redresseurs Expired FR1290092A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR863373A FR1290092A (fr) 1960-06-03 1961-05-30 Perfectionnements aux semi-conducteurs redresseurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1984260 1960-06-03
FR863373A FR1290092A (fr) 1960-06-03 1961-05-30 Perfectionnements aux semi-conducteurs redresseurs

Publications (1)

Publication Number Publication Date
FR1290092A true FR1290092A (fr) 1962-04-06

Family

ID=26190786

Family Applications (1)

Application Number Title Priority Date Filing Date
FR863373A Expired FR1290092A (fr) 1960-06-03 1961-05-30 Perfectionnements aux semi-conducteurs redresseurs

Country Status (1)

Country Link
FR (1) FR1290092A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235434B (de) * 1962-08-15 1967-03-02 Ass Elect Ind Verfahren zum Ausbilden eines Kurzschlusses zwischen der Emitterzone und der benachbarten Zone entgegengesetzten Leitungstyps eines steuerbaren Siliziumgleichrichterelementes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235434B (de) * 1962-08-15 1967-03-02 Ass Elect Ind Verfahren zum Ausbilden eines Kurzschlusses zwischen der Emitterzone und der benachbarten Zone entgegengesetzten Leitungstyps eines steuerbaren Siliziumgleichrichterelementes

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