FR1277468A - Procédé pour fabriquer des tiges semi-conductrices mono-cristallines - Google Patents

Procédé pour fabriquer des tiges semi-conductrices mono-cristallines

Info

Publication number
FR1277468A
FR1277468A FR845629D FR845629D FR1277468A FR 1277468 A FR1277468 A FR 1277468A FR 845629 D FR845629 D FR 845629D FR 845629 D FR845629 D FR 845629D FR 1277468 A FR1277468 A FR 1277468A
Authority
FR
France
Prior art keywords
crystalline semiconductor
semiconductor rods
making mono
mono
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR845629D
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1277468A publication Critical patent/FR1277468A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR845629D 1959-12-23 1960-12-01 Procédé pour fabriquer des tiges semi-conductrices mono-cristallines Expired FR1277468A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66407A DE1141978B (de) 1959-12-23 1959-12-23 Verfahren zum Herstellen duenner einkristalliner Halbleiterstaebe

Publications (1)

Publication Number Publication Date
FR1277468A true FR1277468A (fr) 1961-12-01

Family

ID=7498786

Family Applications (1)

Application Number Title Priority Date Filing Date
FR845629D Expired FR1277468A (fr) 1959-12-23 1960-12-01 Procédé pour fabriquer des tiges semi-conductrices mono-cristallines

Country Status (6)

Country Link
US (1) US3232716A (xx)
CH (1) CH425736A (xx)
DE (1) DE1141978B (xx)
FR (1) FR1277468A (xx)
GB (1) GB906485A (xx)
NL (2) NL133150C (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1256626B (de) * 1963-03-13 1967-12-21 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
DE1260439B (de) * 1964-02-08 1968-02-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod
GB1475261A (en) * 1975-04-02 1977-06-01 Nat Res Dev Siliceous materials
DK142586B (da) * 1977-07-07 1980-11-24 Topsil As Apparat til zonesmeltning af en halvlederstav.

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL89230C (xx) * 1952-12-17 1900-01-01
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2814707A (en) * 1954-11-12 1957-11-26 Rca Corp Induction heating device
AT207857B (de) * 1955-01-14 Degussa Verfahren zur Herstellung von Blausäure durch Umsetzung von Kohlenwasserstoffen mit Ammoniak im Katalysatorbett
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2876324A (en) * 1957-11-29 1959-03-03 Sylvania Electric Prod Induction heating apparatus
NL234451A (xx) * 1957-12-27
NL112832C (xx) * 1959-05-08
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Also Published As

Publication number Publication date
CH425736A (de) 1966-12-15
NL258961A (xx)
DE1141978B (de) 1963-01-03
US3232716A (en) 1966-02-01
GB906485A (en) 1962-09-19
NL133150C (xx)

Similar Documents

Publication Publication Date Title
CH478594A (de) Verfahren zum Herstellen hochreiner Siliciumstäbe
FR1191334A (fr) Procédé pour le revêtement des poly-fluoroéthylènes
FR1301940A (fr) Procédé de production du bismuth
FR1277468A (fr) Procédé pour fabriquer des tiges semi-conductrices mono-cristallines
FR1245457A (fr) Procédé pour la préparation du dicyanogène
CH376887A (fr) Procédé pour récupérer du tungstène
FR1244721A (fr) Procédé pour produire des eupolyoxy-méthylènes
FR1248252A (fr) Procédé pour la production de cyclododécanonoxime
FR1274968A (fr) Procédé pour préparer des alcoyl- et des aralcoyl-biguanides
CH406455A (fr) Procédé pour préparer le UO2
FR1230558A (fr) Procédé de préparation du néo-pentyl-glycol
FR1378402A (fr) Procédé pour fabriquer des tiges cristallines semi-conductrices par tirage
FR1306604A (fr) Procédé pour préparer des bisphényléthylènes substitués
FR1202915A (fr) Procédé pour préparer des polycarbonates
FR1224969A (fr) Procédé de fabrication de lingots cannelés
FR1190264A (fr) Procédé pour la teinture du polyacrylnitrile
FR1264942A (fr) Procédé pour préparer les n-dialcoyl- et n-diaralcoyl-phosphoryl-homocystétinethiolactones
FR1264890A (fr) Procédé pour préparer des perchlorométhylmercaptoamino-triazines
FR1250130A (fr) Procédé pour préparer des mono- et di-fluoranthraquinones
FR1473806A (fr) Procédé pour préparer des alpha-pyrrolidinocétones
BE593539A (fr) Procédé pour la fabrication de N-Dialcoyl- et de N-Diaralcoylphosphorylhomocystérnothiolactones
FR1205766A (fr) Procédé pour produire des bis-amidoximes
FR1248647A (fr) Procédé de préparation du sobrérol
FR1214275A (fr) Procédé pour préparer des pigments siliceux
FR76689E (fr) Procédé pour la teinture du polyacrylnitrile