FR1224825A - Appareil pour affiner les semi-conducteurs - Google Patents

Appareil pour affiner les semi-conducteurs

Info

Publication number
FR1224825A
FR1224825A FR774577A FR774577A FR1224825A FR 1224825 A FR1224825 A FR 1224825A FR 774577 A FR774577 A FR 774577A FR 774577 A FR774577 A FR 774577A FR 1224825 A FR1224825 A FR 1224825A
Authority
FR
France
Prior art keywords
semiconductors
refining
refining semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR774577A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Application granted granted Critical
Publication of FR1224825A publication Critical patent/FR1224825A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR774577A 1957-09-23 1958-09-16 Appareil pour affiner les semi-conducteurs Expired FR1224825A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US685652A US2897329A (en) 1957-09-23 1957-09-23 Zone melting apparatus

Publications (1)

Publication Number Publication Date
FR1224825A true FR1224825A (fr) 1960-06-27

Family

ID=24753126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR774577A Expired FR1224825A (fr) 1957-09-23 1958-09-16 Appareil pour affiner les semi-conducteurs

Country Status (3)

Country Link
US (1) US2897329A (fr)
FR (1) FR1224825A (fr)
GB (1) GB847189A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235463B (de) * 1963-01-31 1967-03-02 Commissariat Energie Atomique Verfahren zum Verdichten von bei Raumtemperatur elektrisch nicht oder schlecht leitenden chemischen Verbindungen
EP0102054A1 (fr) * 1982-08-27 1984-03-07 Zaidan Hojin Handotai Kenkyu Shinkokai Procédé pour la croissance de GaAs monocristallin par fusion par zone flottante

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL114078C (fr) * 1957-03-07 1900-01-01
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
US3023091A (en) * 1959-03-02 1962-02-27 Raytheon Co Methods of heating and levitating molten material
US3086850A (en) * 1959-06-17 1963-04-23 Itt Method and means for growing and treating crystals
US3101257A (en) * 1959-08-17 1963-08-20 Lawrence M Hagen Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
NL244489A (fr) * 1959-10-19
NL260305A (fr) * 1960-01-20
US3092462A (en) * 1960-01-28 1963-06-04 Philips Corp Method for the manufacture of rods of meltable material
DE1163559B (de) * 1960-08-20 1964-02-20 Siemens Ag Verfahren und Vorrichtung zum Herstellen von einkristallinen Staeben, insbesondere fuer Halbleiteranordnungen, durch tiegelfreies Zonenschmelzen
NL269311A (fr) * 1960-09-20
FR1317786A (fr) * 1961-03-17 1963-05-08
US3156807A (en) * 1961-10-27 1964-11-10 North American Aviation Inc Induction heating method and means
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
CA888377A (en) * 1969-09-29 1971-12-14 Canadian Westinghouse Company Limited Vacuum induction heat treatment of long tubular products
US3858549A (en) * 1973-08-15 1975-01-07 Siemens Ag Apparatus for controlled doping of semiconductor crystals
US4120743A (en) * 1975-12-31 1978-10-17 Motorola, Inc. Crossed grain growth
US4419177A (en) * 1980-09-29 1983-12-06 Olin Corporation Process for electromagnetically casting or reforming strip materials

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235463B (de) * 1963-01-31 1967-03-02 Commissariat Energie Atomique Verfahren zum Verdichten von bei Raumtemperatur elektrisch nicht oder schlecht leitenden chemischen Verbindungen
EP0102054A1 (fr) * 1982-08-27 1984-03-07 Zaidan Hojin Handotai Kenkyu Shinkokai Procédé pour la croissance de GaAs monocristallin par fusion par zone flottante

Also Published As

Publication number Publication date
GB847189A (en) 1960-09-07
US2897329A (en) 1959-07-28

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