FR1210447A - Perfectionnements apportés à la fabrication de dispositifs semi-conducteurs - Google Patents

Perfectionnements apportés à la fabrication de dispositifs semi-conducteurs

Info

Publication number
FR1210447A
FR1210447A FR1210447DA FR1210447A FR 1210447 A FR1210447 A FR 1210447A FR 1210447D A FR1210447D A FR 1210447DA FR 1210447 A FR1210447 A FR 1210447A
Authority
FR
France
Prior art keywords
manufacture
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of FR1210447A publication Critical patent/FR1210447A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
FR1210447D 1957-10-01 1958-09-27 Perfectionnements apportés à la fabrication de dispositifs semi-conducteurs Expired FR1210447A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1210447XA 1957-10-01 1957-10-01

Publications (1)

Publication Number Publication Date
FR1210447A true FR1210447A (fr) 1960-03-08

Family

ID=22394146

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1210447D Expired FR1210447A (fr) 1957-10-01 1958-09-27 Perfectionnements apportés à la fabrication de dispositifs semi-conducteurs

Country Status (2)

Country Link
FR (1) FR1210447A (enrdf_load_html_response)
NL (1) NL230797A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1192323B (de) * 1960-11-02 1965-05-06 Siemens Ag Verfahren zum Herstellen von Schweissstellen zwischen den Teilen eines ein Halbleiterelement gasdicht einschliessenden Gehaeuses und Anordnungen zur Durchfuehrung dieses Verfahrens
DE102005001449B3 (de) * 2005-01-12 2006-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen eines vorgegebenen Innendrucks in einem Hohlraum eines Halbleiterbauelements

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1192323B (de) * 1960-11-02 1965-05-06 Siemens Ag Verfahren zum Herstellen von Schweissstellen zwischen den Teilen eines ein Halbleiterelement gasdicht einschliessenden Gehaeuses und Anordnungen zur Durchfuehrung dieses Verfahrens
DE102005001449B3 (de) * 2005-01-12 2006-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen eines vorgegebenen Innendrucks in einem Hohlraum eines Halbleiterbauelements
US7410828B2 (en) 2005-01-12 2008-08-12 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Method of creating a predefined internal pressure within a cavity of a semiconductor device

Also Published As

Publication number Publication date
NL230797A (enrdf_load_html_response)

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