FR1202531A - Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons - Google Patents

Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons

Info

Publication number
FR1202531A
FR1202531A FR1202531DA FR1202531A FR 1202531 A FR1202531 A FR 1202531A FR 1202531D A FR1202531D A FR 1202531DA FR 1202531 A FR1202531 A FR 1202531A
Authority
FR
France
Prior art keywords
transistrons
rectifiers
wetting
applicable
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Application granted granted Critical
Publication of FR1202531A publication Critical patent/FR1202531A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1202531D 1957-09-11 1958-09-11 Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons Expired FR1202531A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2861457A GB894786A (en) 1957-09-11 1957-09-11 Improvements relating to the manufacture of silicon semi-conductor devices

Publications (1)

Publication Number Publication Date
FR1202531A true FR1202531A (fr) 1960-01-11

Family

ID=10278383

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1202531D Expired FR1202531A (fr) 1957-09-11 1958-09-11 Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons

Country Status (4)

Country Link
BE (1) BE571042A (US20020095090A1-20020718-M00002.png)
DE (1) DE1260636B (US20020095090A1-20020718-M00002.png)
FR (1) FR1202531A (US20020095090A1-20020718-M00002.png)
GB (1) GB894786A (US20020095090A1-20020718-M00002.png)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE408226C (de) * 1922-09-30 1925-01-14 Arno Rysick Typensetz- und Ablegevorrichtung mit Typen in nebeneinanderliegenden Rinnen
BE520380A (US20020095090A1-20020718-M00002.png) * 1952-06-02
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them

Also Published As

Publication number Publication date
GB894786A (en) 1962-04-26
BE571042A (US20020095090A1-20020718-M00002.png)
DE1260636B (de) 1968-02-08

Similar Documents

Publication Publication Date Title
FR1192271A (fr) Procédé pour produire un acier au silicium orienté
FR69413E (fr) Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur
CH373359A (fr) Procédé de fabrication de nitrure d'aluminium
FR1181255A (fr) Procédé pour l'alcoylation de tétrachlorure de silicium ou d'alcoyl-ou arylchlorosilanes
FR1157770A (fr) Procédé de fabrication de redresseurs ou de transistors à surfaces
FR1202531A (fr) Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons
FR1126109A (fr) Procédé pour la production de couches métalliques sur la surface des semi-conducteurs, de préférence pour la production de couches de blocage pour redresseurs et transistors, et dispositions de semi-conducteurs conformes à celles obtenues par lesdits procédés
FR1187467A (fr) Procédé de fabrication d'alliages d'aluminium
FR1250785A (fr) Procédé de fabrication d'acier au silicium à cristaux orientés
FR1192658A (fr) Procédé pour la fabrication de redresseurs à semi-conducteurs
FR1244085A (fr) Procédé perfectionné pour la fabrication d'élastomères oléfiniques
FR1209308A (fr) Procédé de fabrication d'acier au silicium
BE594001A (fr) Procédé de production d'acier an silicium à orientation préferée
FR1237002A (fr) Procédé pour la fabrication d'éléments redresseurs à semi-conducteurs
FR1198903A (fr) Procédé de fabrication d'outils à finir les engrenages
FR1355530A (fr) Procédé pour la fabrication d'une 2-(tétrahydronaphtyl-1')-amino-imidazoline
FR1348274A (fr) Procédé de fabrication de tôles d'acier au silicium non orienté
FR1246170A (fr) Procédé de fabrication d'un halogénure de silicium purifié
FR1147041A (fr) Procédé pour la fabrication d'outils à meuler et à polir, et outils conformes àceux obtenus
BE576774A (fr) Procédé de fabrication de tôles et de bandes d'acier au silicium à cubes orientés.
FR1251093A (fr) Procédé de fabrication d'alliages au silicium
FR1282305A (fr) Procédé pour la fabrication de redresseurs
FR1098711A (fr) Procédé de collage d'une pièce sur une autre et son application à la fabrication de skis
FR1263089A (fr) Procédé pour la fabrication d'une vanne et vanne fabriquée selon ce procédé
FR1151187A (fr) Procédé pour la fabrication de carbure de silicium vert