FR1184385A - Nouveau transistron à jonctions et dispositifs les utilisant - Google Patents

Nouveau transistron à jonctions et dispositifs les utilisant

Info

Publication number
FR1184385A
FR1184385A FR1184385DA FR1184385A FR 1184385 A FR1184385 A FR 1184385A FR 1184385D A FR1184385D A FR 1184385DA FR 1184385 A FR1184385 A FR 1184385A
Authority
FR
France
Prior art keywords
transistron
junctions
new
devices
new transistron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1184385A publication Critical patent/FR1184385A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
FR1184385D 1956-10-17 1957-10-15 Nouveau transistron à jonctions et dispositifs les utilisant Expired FR1184385A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1184385XA 1956-10-17 1956-10-17

Publications (1)

Publication Number Publication Date
FR1184385A true FR1184385A (fr) 1959-07-21

Family

ID=22378581

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1184385D Expired FR1184385A (fr) 1956-10-17 1957-10-15 Nouveau transistron à jonctions et dispositifs les utilisant

Country Status (2)

Country Link
DE (1) DE1084839B (de)
FR (1) FR1184385A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130525B (de) * 1959-02-26 1962-05-30 Westinghouse Electric Corp Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper eines bestimmten Leitungstyps
DE1209661B (de) * 1963-03-13 1966-01-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (de) * 1948-06-26
GB715398A (en) * 1951-12-31 1954-09-15 Gen Electric Co Ltd Improvements in or relating to the manufacture of electrical amplifying devices
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130525B (de) * 1959-02-26 1962-05-30 Westinghouse Electric Corp Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper eines bestimmten Leitungstyps
DE1209661B (de) * 1963-03-13 1966-01-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode

Also Published As

Publication number Publication date
DE1084839B (de) 1960-07-07

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