FR1154281A - Fabrication de silicium pur - Google Patents
Fabrication de silicium purInfo
- Publication number
- FR1154281A FR1154281A FR1154281DA FR1154281A FR 1154281 A FR1154281 A FR 1154281A FR 1154281D A FR1154281D A FR 1154281DA FR 1154281 A FR1154281 A FR 1154281A
- Authority
- FR
- France
- Prior art keywords
- manufacture
- pure silicon
- pure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US856137XA | 1955-06-27 | 1955-06-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1154281A true FR1154281A (fr) | 1958-04-04 |
Family
ID=22192782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1154281D Expired FR1154281A (fr) | 1955-06-27 | 1956-06-26 | Fabrication de silicium pur |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1154281A (fr) |
GB (1) | GB856137A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3006737A (en) * | 1959-06-02 | 1961-10-31 | Guy H Moates | Apparatus for continuous preparation of ultrapure silicon |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7732012B2 (en) | 2004-06-22 | 2010-06-08 | Shin-Etsu Film Co., Ltd | Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method |
-
1956
- 1956-06-19 GB GB18965/56A patent/GB856137A/en not_active Expired
- 1956-06-26 FR FR1154281D patent/FR1154281A/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3006737A (en) * | 1959-06-02 | 1961-10-31 | Guy H Moates | Apparatus for continuous preparation of ultrapure silicon |
Also Published As
Publication number | Publication date |
---|---|
GB856137A (en) | 1960-12-14 |
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