FR1137424A - Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron - Google Patents

Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron

Info

Publication number
FR1137424A
FR1137424A FR1137424DA FR1137424A FR 1137424 A FR1137424 A FR 1137424A FR 1137424D A FR1137424D A FR 1137424DA FR 1137424 A FR1137424 A FR 1137424A
Authority
FR
France
Prior art keywords
transistron
barrier
layer electrodes
crystal diode
particular crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1137424A publication Critical patent/FR1137424A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/70Tunnel-effect diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1137424D 1954-07-21 1955-07-19 Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron Expired FR1137424A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL334119X 1954-07-21

Publications (1)

Publication Number Publication Date
FR1137424A true FR1137424A (fr) 1957-05-28

Family

ID=19784480

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1137424D Expired FR1137424A (fr) 1954-07-21 1955-07-19 Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron

Country Status (7)

Country Link
US (1) US2868683A (en:Method)
BE (1) BE539938A (en:Method)
CH (1) CH334119A (en:Method)
DE (1) DE1044283B (en:Method)
FR (1) FR1137424A (en:Method)
GB (1) GB783647A (en:Method)
NL (1) NL96809C (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090329B (de) * 1958-09-05 1960-10-06 Siemens Ag Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor
DE1105522B (de) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor mit einem scheibenfoermigen Halbleiterkoerper
DE1129624B (de) * 1957-07-03 1962-05-17 Philco Corp Verfahren zum Herstellen eines Drift-Transistors mit einem plaettchen-foermigen Halbleiterkoerper mit einem Widerstandsgradienten entlang seiner Dicke

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
NL241053A (en:Method) * 1958-07-10
US3005735A (en) * 1959-07-24 1961-10-24 Philco Corp Method of fabricating semiconductor devices comprising cadmium-containing contacts
US3054912A (en) * 1959-11-10 1962-09-18 Westinghouse Electric Corp Current controlled negative resistance semiconductor device
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
DE1151605C2 (de) * 1960-08-26 1964-02-06 Telefunken Patent Halbleiterbauelement
DE1192325B (de) 1960-12-29 1965-05-06 Telefunken Patent Verfahren zur Herstellung eines Drifttransistors
US3242392A (en) * 1961-04-06 1966-03-22 Nippon Electric Co Low rc semiconductor diode
US3178797A (en) * 1961-06-12 1965-04-20 Ibm Semiconductor device formation
NL295683A (en:Method) * 1962-07-24
US3293010A (en) * 1964-01-02 1966-12-20 Motorola Inc Passivated alloy diode
US3388012A (en) * 1964-09-15 1968-06-11 Bendix Corp Method of forming a semiconductor device by diffusing and alloying
US3354006A (en) * 1965-03-01 1967-11-21 Texas Instruments Inc Method of forming a diode by using a mask and diffusion
US3649882A (en) * 1970-05-13 1972-03-14 Albert Louis Hoffman Diffused alloyed emitter and the like and a method of manufacture thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (en:Method) * 1949-11-30
BE506280A (en:Method) * 1950-10-10
BE509910A (en:Method) * 1951-05-05
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2829075A (en) * 1954-09-09 1958-04-01 Rca Corp Field controlled semiconductor devices and methods of making them
NL107361C (en:Method) * 1955-04-22 1900-01-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1129624B (de) * 1957-07-03 1962-05-17 Philco Corp Verfahren zum Herstellen eines Drift-Transistors mit einem plaettchen-foermigen Halbleiterkoerper mit einem Widerstandsgradienten entlang seiner Dicke
DE1090329B (de) * 1958-09-05 1960-10-06 Siemens Ag Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor
DE1105522B (de) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor mit einem scheibenfoermigen Halbleiterkoerper

Also Published As

Publication number Publication date
GB783647A (en) 1957-09-25
BE539938A (en:Method)
US2868683A (en) 1959-01-13
NL96809C (en:Method)
CH334119A (de) 1958-11-15
DE1044283B (de) 1958-11-20

Similar Documents

Publication Publication Date Title
FR1126817A (fr) Système d'électrodes à couche d'arrêt
FR1137424A (fr) Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron
FR1153884A (fr) Système d'électrodes à couche d'arrêt, en particulier transistron ou diode à cristal
FR1194674A (fr) Système d'électrodes à semi-conducteur
FR1115250A (fr) Système d'électrodes, en particulier diode à cristal ou transisteur
FR1150118A (fr) Filtre d'aiguillage
FR1088890A (fr) Perfectionnements à la purification de l'urée
FR1137383A (fr) Système d'électrodes à couche d'arrêt
FR1130959A (fr) Perfectionnements à l'hydroreformation de naphtes
FR1109644A (fr) Système d'électrodes à couche d'arrêt
FR1222499A (fr) Verres d'optique
FR1115824A (fr) Système d'électrodes, en particulier diode à cristal ou transistor
FR1116044A (fr) Système d'électrodes, en particulier diode à cristal ou transisteur, à enveloppede verre
FR1125436A (fr) Copolymères à blocs siloxane-oxyalcoylène
FR1141491A (fr) Système d'électrodes
FR1116097A (fr) Système d'électrodes et plus particulièrement diode à cristal ou transisteur
FR1125356A (fr) Système d'électrodes
FR1160863A (fr) Filtre d'aiguillage
FR1116365A (fr) Système d'électrodes comportant un corps semi-conducteur, en particulier diode à cristal ou transisteur
FR1215681A (fr) Système d'électrodes à semi-conducteur
FR1192625A (fr) Système d'électrodes à semi-conducteur
FR1157698A (fr) Système d'électrodes à semi-conducteur
FR1115320A (fr) Perfectionnements apportés à la construction de hangars
FR1096455A (fr) Filtre d'aiguillage
FR68988E (fr) Pont routier et ferroviaire démontable