BE506280A - - Google Patents

Info

Publication number
BE506280A
BE506280A BE506280DA BE506280A BE 506280 A BE506280 A BE 506280A BE 506280D A BE506280D A BE 506280DA BE 506280 A BE506280 A BE 506280A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE506280A publication Critical patent/BE506280A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681Ga-, In-, Tl- or Group VA metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
BE506280D 1950-10-10 BE506280A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US189387A US2603693A (en) 1950-10-10 1950-10-10 Semiconductor signal translating device

Publications (1)

Publication Number Publication Date
BE506280A true BE506280A (en:Method)

Family

ID=22697118

Family Applications (1)

Application Number Title Priority Date Filing Date
BE506280D BE506280A (en:Method) 1950-10-10

Country Status (4)

Country Link
US (1) US2603693A (en:Method)
BE (1) BE506280A (en:Method)
FR (1) FR1037516A (en:Method)
GB (1) GB704912A (en:Method)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
BE516364A (en:Method) * 1951-12-20
US2757323A (en) * 1952-02-07 1956-07-31 Gen Electric Full wave asymmetrical semi-conductor devices
US2733390A (en) * 1952-06-25 1956-01-31 scanlon
USRE24537E (en) * 1952-07-29 1958-09-23 Unsymmetrical conductor arrangements
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
DE967259C (de) * 1952-11-18 1957-10-31 Gen Electric Flaechentransistor
BE525428A (en:Method) * 1952-12-30
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US2785095A (en) * 1953-04-01 1957-03-12 Rca Corp Semi-conductor devices and methods of making same
DE966906C (de) * 1953-04-09 1957-09-19 Siemens Ag Verfahren zur sperrfreien Kontaktierung von Flaechengleichrichtern oder -transistoren mit einem eine p-n-Schichtung aufweisenden Halbleitereinkristall
US2867732A (en) * 1953-05-14 1959-01-06 Ibm Current multiplication transistors and method of producing same
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
BE529899A (en:Method) * 1953-06-26
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
BE532794A (en:Method) * 1953-10-26
NL99247C (en:Method) * 1954-03-05
NL198430A (en:Method) * 1954-06-29
NL96809C (en:Method) * 1954-07-21
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2879457A (en) * 1954-10-28 1959-03-24 Raytheon Mfg Co Ohmic semiconductor contact
US2874341A (en) * 1954-11-30 1959-02-17 Bell Telephone Labor Inc Ohmic contacts to silicon bodies
NL88273C (en:Method) * 1954-12-01
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
NL110588C (en:Method) * 1955-03-10
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
US2761800A (en) * 1955-05-02 1956-09-04 Rca Corp Method of forming p-n junctions in n-type germanium
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1032407B (de) * 1955-09-29 1958-06-19 Licentia Gmbh Elektrisch unsymmetrisch leitende Halbleiteranordnung und Verfahren zu ihrer Herstellung
NL111786C (en:Method) * 1956-05-04
DE1116824B (de) * 1956-06-07 1961-11-09 Licentia Gmbh Verfahren zum Herstellen einer elektrischen Halbleiteranordnung mit mindestens einemp-n-UEbergang
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
BE562375A (en:Method) * 1957-01-02
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
NL247735A (en:Method) * 1959-01-28
US3226608A (en) * 1959-06-24 1965-12-28 Gen Electric Liquid metal electrical connection
NL269346A (en:Method) * 1960-09-20
NL282240A (en:Method) * 1961-12-04
NL289818A (en:Method) * 1963-03-05
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
US4380114A (en) * 1979-04-11 1983-04-19 Teccor Electronics, Inc. Method of making a semiconductor switching device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials

Also Published As

Publication number Publication date
GB704912A (en) 1954-03-03
US2603693A (en) 1952-07-15
FR1037516A (fr) 1953-09-17

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