GB704912A - Semiconductor electric signal translating devices - Google Patents

Semiconductor electric signal translating devices

Info

Publication number
GB704912A
GB704912A GB23245/51A GB2324551A GB704912A GB 704912 A GB704912 A GB 704912A GB 23245/51 A GB23245/51 A GB 23245/51A GB 2324551 A GB2324551 A GB 2324551A GB 704912 A GB704912 A GB 704912A
Authority
GB
United Kingdom
Prior art keywords
electric signal
per cent
translating devices
signal translating
semiconductor electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23245/51A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB704912A publication Critical patent/GB704912A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to semi-conductor amplifiers, and the manufacture includes a process in which an electrode is fixed to the semi-conductor body by means of a solder comprising 63 per cent. tin and 37 per cent. lead, or 5-10 per cent. antimony and 95-90 per cent. tin. The antimony diffuses into the semi-conductor body, which may be germanium or silicon, to change its electrical characteristics. Reference is made to the use of gallium instead of antimony.
GB23245/51A 1950-10-10 1951-10-05 Semiconductor electric signal translating devices Expired GB704912A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US189387A US2603693A (en) 1950-10-10 1950-10-10 Semiconductor signal translating device

Publications (1)

Publication Number Publication Date
GB704912A true GB704912A (en) 1954-03-03

Family

ID=22697118

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23245/51A Expired GB704912A (en) 1950-10-10 1951-10-05 Semiconductor electric signal translating devices

Country Status (4)

Country Link
US (1) US2603693A (en)
BE (1) BE506280A (en)
FR (1) FR1037516A (en)
GB (1) GB704912A (en)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
BE516364A (en) * 1951-12-20
US2757323A (en) * 1952-02-07 1956-07-31 Gen Electric Full wave asymmetrical semi-conductor devices
US2733390A (en) * 1952-06-25 1956-01-31 scanlon
NL180221B (en) * 1952-07-29 Charbonnages Ste Chimique PROCESS FOR PREPARING A POLYAMINOAMIDE HARDENING AGENT FOR EPOXY RESINS; PROCESS FOR PREPARING A WATER DIVIDED HARDENING AGENT; PROCESS FOR PREPARING AN EPOXY RESIN COMPOSITION CONTAINING SUCH HARDENING AGENT AND AN OBJECT FACING A COATING LAYER OBTAINED FROM SUCH EPOXY RESIN COMPOSITION.
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
DE967259C (en) * 1952-11-18 1957-10-31 Gen Electric Area transistor
BE525428A (en) * 1952-12-30
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US2785095A (en) * 1953-04-01 1957-03-12 Rca Corp Semi-conductor devices and methods of making same
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
US2867732A (en) * 1953-05-14 1959-01-06 Ibm Current multiplication transistors and method of producing same
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
BE529899A (en) * 1953-06-26
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
NL191674A (en) * 1953-10-26
NL99247C (en) * 1954-03-05
NL198430A (en) * 1954-06-29
BE539938A (en) * 1954-07-21
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2879457A (en) * 1954-10-28 1959-03-24 Raytheon Mfg Co Ohmic semiconductor contact
US2874341A (en) * 1954-11-30 1959-02-17 Bell Telephone Labor Inc Ohmic contacts to silicon bodies
BE543253A (en) * 1954-12-01
DE1073111B (en) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Method for producing a flat transistor with a surface layer of increased concentration of impurities at the free points between the electrodes on a single-crystal semiconductor body
NL110588C (en) * 1955-03-10
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
US2761800A (en) * 1955-05-02 1956-09-04 Rca Corp Method of forming p-n junctions in n-type germanium
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1032407B (en) * 1955-09-29 1958-06-19 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement and method for its production
NL111786C (en) * 1956-05-04
DE1116824B (en) * 1956-06-07 1961-11-09 Licentia Gmbh Method for producing an electrical semiconductor arrangement with at least one p-n junction
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
BE562375A (en) * 1957-01-02
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
NL247735A (en) * 1959-01-28
US3226608A (en) * 1959-06-24 1965-12-28 Gen Electric Liquid metal electrical connection
NL269346A (en) * 1960-09-20
NL282240A (en) * 1961-12-04
NL289818A (en) * 1963-03-05
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
US4380114A (en) * 1979-04-11 1983-04-19 Teccor Electronics, Inc. Method of making a semiconductor switching device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials

Also Published As

Publication number Publication date
BE506280A (en)
FR1037516A (en) 1953-09-17
US2603693A (en) 1952-07-15

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