FR1137399A - Redresseurs, transistors, etc., en silicium, carbure de silicium ou corps semi-conducteur analogue - Google Patents

Redresseurs, transistors, etc., en silicium, carbure de silicium ou corps semi-conducteur analogue

Info

Publication number
FR1137399A
FR1137399A FR1137399DA FR1137399A FR 1137399 A FR1137399 A FR 1137399A FR 1137399D A FR1137399D A FR 1137399DA FR 1137399 A FR1137399 A FR 1137399A
Authority
FR
France
Prior art keywords
silicon
rectifiers
transistors
semiconductor body
similar semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1137399A publication Critical patent/FR1137399A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR1137399D 1954-07-27 1955-07-07 Redresseurs, transistors, etc., en silicium, carbure de silicium ou corps semi-conducteur analogue Expired FR1137399A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES40182A DE1032853B (de) 1954-07-27 1954-07-27 Verfahren zur Herstellung von Legierungskontakten auf einem Halbleitergrundkoerper aus Silizium

Publications (1)

Publication Number Publication Date
FR1137399A true FR1137399A (fr) 1957-05-28

Family

ID=7483566

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1137399D Expired FR1137399A (fr) 1954-07-27 1955-07-07 Redresseurs, transistors, etc., en silicium, carbure de silicium ou corps semi-conducteur analogue

Country Status (5)

Country Link
US (1) US2831787A (enExample)
DE (1) DE1032853B (enExample)
FR (1) FR1137399A (enExample)
GB (1) GB795478A (enExample)
NL (2) NL92927C (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080696B (de) * 1956-12-10 1960-04-28 Stanislas Teszner Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
DE1083938B (de) * 1957-09-23 1960-06-23 Nat Res Dev Halbleiteranordnung mit einem Halbleiter-koerper aus Halbleitermaterial eines Leitungstyps
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
NL104185C (enExample) * 1957-08-16
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US2937323A (en) * 1958-05-29 1960-05-17 Westinghouse Electric Corp Fused junctions in silicon carbide
NL230857A (enExample) * 1958-08-26
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
GB945742A (enExample) * 1959-02-06 Texas Instruments Inc
GB936181A (en) * 1959-05-19 1963-09-04 Nat Res Dev Improvements in and relating to solid-state electrical devices
DE1102250B (de) * 1959-11-13 1961-03-16 Licentia Gmbh Verfahren zur Kontaktierung von Halbleiterbauelementen, insbesondere Thermoelementen
NL260481A (enExample) * 1960-02-08
US3176204A (en) * 1960-12-22 1965-03-30 Raytheon Co Device composed of different semiconductive materials
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
NL302497A (enExample) * 1962-12-31
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
US3458777A (en) * 1966-09-21 1969-07-29 Hughes Aircraft Co Pin diode with a non-uniform intrinsic region width
US3448354A (en) * 1967-01-20 1969-06-03 Rca Corp Semiconductor device having increased resistance to second breakdown
DE1539332B2 (de) * 1967-03-21 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Kontaktstück zur Kontaktierung von Thermoelementschenkeln in Thermogenerato ren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (enExample) * 1948-06-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080696B (de) * 1956-12-10 1960-04-28 Stanislas Teszner Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
DE1083938B (de) * 1957-09-23 1960-06-23 Nat Res Dev Halbleiteranordnung mit einem Halbleiter-koerper aus Halbleitermaterial eines Leitungstyps
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices

Also Published As

Publication number Publication date
US2831787A (en) 1958-04-22
GB795478A (en) 1958-05-21
DE1032853B (de) 1958-06-26
NL92927C (enExample)
NL198572A (enExample)

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