FR1127729A - Transisteur à électrodes appliquées par fusion - Google Patents

Transisteur à électrodes appliquées par fusion

Info

Publication number
FR1127729A
FR1127729A FR1127729DA FR1127729A FR 1127729 A FR1127729 A FR 1127729A FR 1127729D A FR1127729D A FR 1127729DA FR 1127729 A FR1127729 A FR 1127729A
Authority
FR
France
Prior art keywords
applied electrode
electrode transistor
fusion applied
fusion
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1127729A publication Critical patent/FR1127729A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR1127729D 1954-07-19 1955-07-18 Transisteur à électrodes appliquées par fusion Expired FR1127729A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1127729X 1954-07-19

Publications (1)

Publication Number Publication Date
FR1127729A true FR1127729A (fr) 1956-12-24

Family

ID=19869807

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1127729D Expired FR1127729A (fr) 1954-07-19 1955-07-18 Transisteur à électrodes appliquées par fusion

Country Status (2)

Country Link
BE (1) BE539908A (enrdf_load_stackoverflow)
FR (1) FR1127729A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1058635B (de) * 1957-01-26 1959-06-04 Telefunken Gmbh Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper zur Herstellung eines Sperrschicht-UEbergangs oder sperrfreien ohmschen Anschlusses
DE1232269B (de) * 1963-08-23 1967-01-12 Telefunken Patent Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL216979A (enrdf_load_stackoverflow) * 1956-05-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1058635B (de) * 1957-01-26 1959-06-04 Telefunken Gmbh Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper zur Herstellung eines Sperrschicht-UEbergangs oder sperrfreien ohmschen Anschlusses
DE1232269B (de) * 1963-08-23 1967-01-12 Telefunken Patent Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone

Also Published As

Publication number Publication date
BE539908A (enrdf_load_stackoverflow)

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