FR1013352A - Perfectionnements aux dispositifs semi-conducteurs - Google Patents

Perfectionnements aux dispositifs semi-conducteurs

Info

Publication number
FR1013352A
FR1013352A FR1013352DA FR1013352A FR 1013352 A FR1013352 A FR 1013352A FR 1013352D A FR1013352D A FR 1013352DA FR 1013352 A FR1013352 A FR 1013352A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1013352A publication Critical patent/FR1013352A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Die Bonding (AREA)
  • Thermistors And Varistors (AREA)
FR1013352D 1949-03-31 1950-02-28 Perfectionnements aux dispositifs semi-conducteurs Expired FR1013352A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8467249A 1949-03-31 1949-03-31

Publications (1)

Publication Number Publication Date
FR1013352A true FR1013352A (fr) 1952-07-28

Family

ID=22186482

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1013352D Expired FR1013352A (fr) 1949-03-31 1950-02-28 Perfectionnements aux dispositifs semi-conducteurs

Country Status (6)

Country Link
US (1) US2734102A (en, 2012)
BE (1) BE494845A (en, 2012)
DE (1) DE837732C (en, 2012)
FR (1) FR1013352A (en, 2012)
GB (1) GB679674A (en, 2012)
NL (1) NL152375C (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966474C (de) * 1949-05-10 1957-08-08 Siemens Ag Steuerbare Halbleitergleichrichter-Anordnung
US2859286A (en) * 1953-11-12 1958-11-04 Raytheon Mfg Co Variable gain devices
NL183243C (nl) * 1953-11-30 Metallgesellschaft Ag Werkwijze voor het op metaaloppervlakken aanbrengen van fosfaatbekledingen.
NL102058C (en, 2012) * 1953-12-31
DE1035778B (de) * 1955-05-20 1958-08-07 Ibm Deutschland Transistor mit einem Halbleitergrundkoerper von einem Leitungstypus und mit drei oder mehr pn-UEbergaengen und einer oder mehreren Spitzenelektroden
NL211758A (en, 2012) * 1955-10-29
US2990501A (en) * 1958-07-10 1961-06-27 Texas Instruments Inc Novel header of semiconductor devices
US3161810A (en) * 1959-12-11 1964-12-15 Texas Instruments Inc Temperature compensated transistor
GB1082519A (en) * 1963-06-18 1967-09-06 Plessey Uk Ltd Multi-emitter transistors and circuit arrangements incorporating same
US3423638A (en) * 1964-09-02 1969-01-21 Gti Corp Micromodular package with compression means holding contacts engaged
US3458776A (en) * 1966-02-28 1969-07-29 Westinghouse Electric Corp Cushioning thrust washer for application of uniform pressure to semiconductor irregular structures

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB233782A (en) * 1924-02-14 1925-05-14 British Thomson Houston Co Ltd Improvements in crystal detectors
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
CH241766A (de) * 1942-12-07 1946-03-31 Philips Nv Sperrschichtgleichrichter, insbesondere für Messzwecke.
US2441590A (en) * 1944-03-24 1948-05-18 Bell Telephone Labor Inc Translating device
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
NL75792C (en, 2012) * 1948-05-19

Also Published As

Publication number Publication date
NL152375C (en, 2012)
US2734102A (en) 1956-02-07
BE494845A (en, 2012)
GB679674A (en) 1952-09-24
DE837732C (de) 1952-05-02

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