FI944485A0 - Styrkrets för en halvledarkopplare - Google Patents

Styrkrets för en halvledarkopplare

Info

Publication number
FI944485A0
FI944485A0 FI944485A FI944485A FI944485A0 FI 944485 A0 FI944485 A0 FI 944485A0 FI 944485 A FI944485 A FI 944485A FI 944485 A FI944485 A FI 944485A FI 944485 A0 FI944485 A0 FI 944485A0
Authority
FI
Finland
Prior art keywords
control circuit
switch control
semiconductor switch
semiconductor
circuit
Prior art date
Application number
FI944485A
Other languages
English (en)
Finnish (fi)
Other versions
FI97176C (sv
FI944485A (sv
FI97176B (sv
Inventor
Erkki Miettinen
Original Assignee
Abb Industry Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Industry Oy filed Critical Abb Industry Oy
Publication of FI944485A0 publication Critical patent/FI944485A0/sv
Priority to FI944485A priority Critical patent/FI97176C/sv
Priority to US08/520,470 priority patent/US5530385A/en
Priority to GB9518030A priority patent/GB2293933B/en
Priority to FR9510883A priority patent/FR2727586B1/fr
Priority to DE19535166A priority patent/DE19535166C2/de
Priority to IT95TO000767A priority patent/IT1281363B1/it
Priority to JP7247146A priority patent/JPH08111635A/ja
Publication of FI944485A publication Critical patent/FI944485A/sv
Application granted granted Critical
Publication of FI97176B publication Critical patent/FI97176B/sv
Publication of FI97176C publication Critical patent/FI97176C/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F29/00—Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F2029/143—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)
  • Relay Circuits (AREA)
FI944485A 1994-09-27 1994-09-27 Styrkrets för en halvledarkopplare FI97176C (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI944485A FI97176C (sv) 1994-09-27 1994-09-27 Styrkrets för en halvledarkopplare
US08/520,470 US5530385A (en) 1994-09-27 1995-08-28 Control circuit for a semiconductor switch
GB9518030A GB2293933B (en) 1994-09-27 1995-09-05 A control circuit for a semiconductor switch
FR9510883A FR2727586B1 (fr) 1994-09-27 1995-09-11 Circuit de commande pour un interrupteur a semi-conducteur
DE19535166A DE19535166C2 (de) 1994-09-27 1995-09-22 Ansteuerschaltung für einen Halbleiterschalter
IT95TO000767A IT1281363B1 (it) 1994-09-27 1995-09-26 Circuito di controllo per un commutatore a semiconduttore
JP7247146A JPH08111635A (ja) 1994-09-27 1995-09-26 半導体スイッチの制御回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI944485A FI97176C (sv) 1994-09-27 1994-09-27 Styrkrets för en halvledarkopplare
FI944485 1994-09-27

Publications (4)

Publication Number Publication Date
FI944485A0 true FI944485A0 (sv) 1994-09-27
FI944485A FI944485A (sv) 1996-03-28
FI97176B FI97176B (sv) 1996-07-15
FI97176C FI97176C (sv) 1996-10-25

Family

ID=8541457

Family Applications (1)

Application Number Title Priority Date Filing Date
FI944485A FI97176C (sv) 1994-09-27 1994-09-27 Styrkrets för en halvledarkopplare

Country Status (7)

Country Link
US (1) US5530385A (sv)
JP (1) JPH08111635A (sv)
DE (1) DE19535166C2 (sv)
FI (1) FI97176C (sv)
FR (1) FR2727586B1 (sv)
GB (1) GB2293933B (sv)
IT (1) IT1281363B1 (sv)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910738A (en) * 1995-04-07 1999-06-08 Kabushiki Kaisha Toshiba Driving circuit for driving a semiconductor device at high speed and method of operating the same
US5663672A (en) * 1995-11-17 1997-09-02 Sundstrand Corporation Transistor gate drive circuit providing dielectric isolation and protection
US5686854A (en) * 1996-03-14 1997-11-11 Magl Power Inc. Isolated driver circuit for high frequency solid-state switches
DE19704808A1 (de) * 1997-02-08 1998-08-13 Bosch Gmbh Robert Vorrichtung zur Ansteuerung eines elektromagnetischen Verbrauchers
JP3067687B2 (ja) * 1997-05-08 2000-07-17 富士電機株式会社 Ｉｇｂｔ駆動回路
GB2356753B (en) * 1999-11-29 2004-08-11 Eev Ltd Switching arrangement
JP3855116B2 (ja) * 2000-03-22 2006-12-06 日本光電工業株式会社 半導体スイッチ駆動回路
EP1391900A1 (de) 2002-08-22 2004-02-25 Abb Research Ltd. Signaltransformator sowie Verfahren zum Betrieb eines solchen Signaltransformers
FI116109B (sv) * 2004-05-10 2005-09-15 Abb Oy Styrkoppling för halvledarkomponent
JP4957495B2 (ja) * 2007-10-03 2012-06-20 株式会社豊田自動織機 信号伝達回路
WO2009079440A1 (en) * 2007-12-17 2009-06-25 Lawson Labs, Inc. Gate-charge retaining switch
US8816653B2 (en) * 2008-09-25 2014-08-26 Infineon Technologies Austria Ag Circuit including a transformer for driving a semiconductor switching element
US7679410B1 (en) 2008-09-29 2010-03-16 The United States Of America As Represented By The Secretary Of The Navy System and method for improving the efficiency and reliability of a broadband transistor switch for periodic switching applications
US8400789B2 (en) * 2010-04-27 2013-03-19 Power Integrations, Inc. Power supply with input filter-controlled switch clamp circuit
FI10493U1 (sv) 2013-02-20 2014-05-22 Vacon Oyj Arrangemang som bildar styrspänningen på styret hos spänningsstyrda effekthalvledarelkopplare i effektelektronikutrustning
DE112013006773T5 (de) 2013-03-06 2015-12-10 SiEVA Vorrichtung für high-side Transistor-Brückentreiber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3616097A1 (de) * 1986-05-13 1987-11-19 Bbc Brown Boveri & Cie Schaltungsanordnung zur ansteuerung von leistungs-feldeffekttransistoren
EP0354435B1 (en) * 1988-08-12 1995-12-20 Hitachi, Ltd. A drive circuit for an insulated gate transistor; and its use in a switching circuit, a current switching apparatus and an induction motor system
US5055762A (en) * 1989-04-17 1991-10-08 General Motors Corporation Current controlled full wave transitor bridge inverter for a multiple phase AC machine
FR2669477A1 (fr) * 1990-11-16 1992-05-22 Gen Electric Cgr Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.
DE4139997A1 (de) * 1990-12-06 1992-07-09 Ozcan Akdogan Schaltungsanordnung mit leistungs-mosfet-transistoren
US5257323A (en) * 1991-05-29 1993-10-26 Canon Kabushiki Kaisha Selection agent for a symbol determination system with multiple character recognition processors
US5168182A (en) * 1991-06-24 1992-12-01 United Technologies Corporation 0-100% duty cycle, transformer isolated fet driver
FI90605C (sv) * 1991-12-09 1994-02-25 Abb Stroemberg Drives Oy Styrkrets för en halvledarkopplare
DE4208894A1 (de) * 1992-03-19 1993-09-23 Abb Patent Gmbh Schaltung zur ansteuerung eines spannungsgesteuerten halbleiterschalters
FR2693604B1 (fr) * 1992-07-10 1994-10-07 Sgs Thomson Microelectronics Convertisseur commandé par impulsions et commande électrique de moteur.

Also Published As

Publication number Publication date
FI97176C (sv) 1996-10-25
GB2293933B (en) 1998-10-28
GB9518030D0 (en) 1995-11-08
GB2293933A (en) 1996-04-10
ITTO950767A0 (it) 1995-09-26
DE19535166A1 (de) 1996-03-28
FR2727586A1 (fr) 1996-05-31
FR2727586B1 (fr) 1998-11-20
US5530385A (en) 1996-06-25
IT1281363B1 (it) 1998-02-18
FI944485A (sv) 1996-03-28
FI97176B (sv) 1996-07-15
DE19535166C2 (de) 2002-10-24
ITTO950767A1 (it) 1997-03-26
JPH08111635A (ja) 1996-04-30

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Legal Events

Date Code Title Description
BB Publication of examined application