FI912889A0 - Framstaellningsapparat foer kiselenkristall. - Google Patents

Framstaellningsapparat foer kiselenkristall.

Info

Publication number
FI912889A0
FI912889A0 FI912889A FI912889A FI912889A0 FI 912889 A0 FI912889 A0 FI 912889A0 FI 912889 A FI912889 A FI 912889A FI 912889 A FI912889 A FI 912889A FI 912889 A0 FI912889 A0 FI 912889A0
Authority
FI
Finland
Prior art keywords
kiselenkristall
framstaellningsapparat
foer
framstaellningsapparat foer
foer kiselenkristall
Prior art date
Application number
FI912889A
Other languages
English (en)
Inventor
Yoshinobu Shima
Kenji Araki
Hiroshi Kamio
Makoto Suzuki
Original Assignee
Nippon Kokan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kokan Kk filed Critical Nippon Kokan Kk
Publication of FI912889A0 publication Critical patent/FI912889A0/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FI912889A 1989-10-16 1991-06-14 Framstaellningsapparat foer kiselenkristall. FI912889A0 (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26880089 1989-10-16
PCT/JP1990/001319 WO1991005891A1 (en) 1989-10-16 1990-10-12 Apparatus for manufacturing silicon single crystals

Publications (1)

Publication Number Publication Date
FI912889A0 true FI912889A0 (fi) 1991-06-14

Family

ID=17463445

Family Applications (1)

Application Number Title Priority Date Filing Date
FI912889A FI912889A0 (fi) 1989-10-16 1991-06-14 Framstaellningsapparat foer kiselenkristall.

Country Status (6)

Country Link
US (1) US5139750A (fi)
EP (1) EP0450089A4 (fi)
KR (1) KR920701529A (fi)
CN (1) CN1051595A (fi)
FI (1) FI912889A0 (fi)
WO (1) WO1991005891A1 (fi)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
EP0530397A1 (en) * 1991-09-04 1993-03-10 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
US6984263B2 (en) * 2001-11-01 2006-01-10 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
EP1806437B1 (en) * 2004-09-03 2016-08-17 Nippon Steel & Sumitomo Metal Corporation Method for preparing silicon carbide single crystal
US8652257B2 (en) 2010-02-22 2014-02-18 Lev George Eidelman Controlled gravity feeding czochralski apparatus with on the way melting raw material
CN102373500A (zh) * 2010-08-16 2012-03-14 元亮科技有限公司 一种太阳能级单晶硅的生长方法和设备
CN102260900B (zh) * 2011-07-14 2013-11-27 西安华晶电子技术股份有限公司 提高单晶硅纵向电阻率一致性的装置及其处理工艺
CN102220634B (zh) * 2011-07-15 2012-12-05 西安华晶电子技术股份有限公司 一种提高直拉硅单晶生产效率的方法
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
KR20150106204A (ko) 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
KR20150107540A (ko) 2014-03-14 2015-09-23 (주)기술과가치 잉곳 제조 장치
CN104651934B (zh) * 2014-10-17 2017-12-01 洛阳西格马炉业股份有限公司 一种节能型蓝宝石晶体生长炉
US11959189B2 (en) 2019-04-11 2024-04-16 Globalwafers Co., Ltd. Process for preparing ingot having reduced distortion at late body length
KR102576552B1 (ko) 2019-04-18 2023-09-07 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 단결정 실리콘 잉곳을 성장시키기 위한 방법들
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
JP6777908B1 (ja) * 2019-11-19 2020-10-28 Ｆｔｂ研究所株式会社 単結晶成長装置、該単結晶成長装置の使用方法および単結晶成長方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
JPS5623679U (fi) * 1979-08-01 1981-03-03
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
CA1306407C (en) * 1987-06-08 1992-08-18 Michio Kida Apparatus for growing crystals of semiconductor materials
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JPH01275495A (ja) * 1988-04-28 1989-11-06 Nkk Corp シリコン単結晶の製造方法及び装置
JPH0676274B2 (ja) * 1988-11-11 1994-09-28 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH02172885A (ja) * 1988-12-26 1990-07-04 Nkk Corp シリコン単結晶の製造方法
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置

Also Published As

Publication number Publication date
CN1051595A (zh) 1991-05-22
US5139750A (en) 1992-08-18
EP0450089A1 (en) 1991-10-09
EP0450089A4 (en) 1992-07-08
WO1991005891A1 (en) 1991-05-02
KR920701529A (ko) 1992-08-11

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